Simultaneous synthesis and integration of two-dimensional electronic components

Ion Gel‐Gated Nonvolatile Formation of Lateral MoTe2 Diode for Self‐Powered Near‐Infrared Photodetection

“…As a member of 2D transition metal dichalcogenides (TMDs), MoTe 2 has attracted prominent interests due to its moderate bandgap of ≈0.8–1.1 eV, ambipolar transport characteristics, and rich phases (1T, metallic, 1T′, semimetallic, and 2H, semiconductor) . Many efforts have focused on the engineering of phase transition between 1T or 1T′ and 2H‐MoTe 2 , i.e., by IL gate‐induced charge injection, growth temperature or seed layer for chemical vapor deposition (CVD), or laser‐generated hot spot . Meanwhile, the ambipolar behavior of 2H‐MoTe 2 makes it of particular interest for functional devices.…”

Relaxation and transfer of photoexcited electrons at a coplanar few-layer 1 T′/2H-MoTe2 heterojunction

“…The traditional method to reduce the contact resistance for silicon is to decrease the depletion region width by locally doping near the metal-silicon junction, which is invalid in 2D devices. The devices based on 2D materials were usually fabricated using direct metal electrode deposition that can introduce defects and impurities, which leads to a reduction in device performance 1 . Recently, contacting 2D semiconductors through seamless coplanar 2D metal, such as metallic 1 T-MoS 2 / semiconducting 2H-MoS 2 (ref.…”

Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides

“…Scalable monolayer MoTe 2 with 100% coverage has been grown on inert SiO 2 substrate. The dynamic-controlled growth can also be extended to synthesizing film on sapphire substrate [61]. Layer-bylayer epitaxial growth of WSe 2 thin film on Al 2 O 3 substrates and its ambipolar electronic characteristic has been reported by Nakano et al [31] Similar epitaxial growth recipe is also applicable for other TMD films as well.…”

“…For the two-step vapor chalcogenization method, precursors containing transition metal like Mo [59], MoO 3 [60,61], or (NH 4 ) 2 MoS 4 [55] are initially deposited as thin films on the substrate, followed by a chemical reaction in chalcogenide (S, Se or Te) enriched environment at high temperature. This method can produce large-area film with excellent uniformity, mainly because the thin film deposition can be carried out in a controllable manner, by various deposition techniques, including thermal evaporation, Ebeam evaporation, ALD, magnetron sputtering, as well as the convenient spin-coating method.…”

“…An improved electrical contact in which Au contact electrodes is deposited on Mo prior to the sulfurization has been put forward based on this synthetic strategy [62]. Zhang et al [61] demonstrated tellurization of MoO 2.0-2.5 and MoO 3 thin films to produce 2H and 1T' MoTe 2 according to the phase evolution, and integrated them into functional devices. When it comes to several atomic layers, compared with the physical vapor deposition of Mo or MoO 3 , ALD is a more precise film growth technique with atomic resolution.…”