2020
DOI: 10.1038/s43246-020-00062-6
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Relaxation and transfer of photoexcited electrons at a coplanar few-layer 1 T′/2H-MoTe2 heterojunction

Abstract: Fundamental dynamic processes at the electronic contact interface, such as carrier injection and transport, become pivotal and significantly affect device performance. Time-resolved photoemission electron microscopy (TR-PEEM) with high spatiotemporal resolution provides unprecedented abilities of imaging the electron dynamics at the interface. Here, we implement TR-PEEM to investigate the electron dynamics at a coplanar metallic 1 T′-MoTe 2 /semiconducting 2H-MoTe 2 heterojunction. We find the non-equilibrium … Show more

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Cited by 13 publications
(18 citation statements)
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“…For instance, resonant exciton excitations (Figure b, c) remain localized with relatively homogeneous defects induced by the Si substrate serving as hole traps . The interface states at the flake edge create faster decaying defect pathways for electron cooling but slower multibody decay, which would seem to indicate that flakes formed in the shape with the smallest edge area would be best . However, Figure d shows hot exciton charge pooling along the interior of TMD flakes from lattice heterogeneities.…”
Section: Dynamic Pump−probe Measurement Techniquesmentioning
confidence: 99%
See 1 more Smart Citation
“…For instance, resonant exciton excitations (Figure b, c) remain localized with relatively homogeneous defects induced by the Si substrate serving as hole traps . The interface states at the flake edge create faster decaying defect pathways for electron cooling but slower multibody decay, which would seem to indicate that flakes formed in the shape with the smallest edge area would be best . However, Figure d shows hot exciton charge pooling along the interior of TMD flakes from lattice heterogeneities.…”
Section: Dynamic Pump−probe Measurement Techniquesmentioning
confidence: 99%
“…Defects are typically the result of chalcogen vacancies that can be filled through oxygen adsorption and create trap states. These trap states create nonradiative recombination pathways and are the primary mechanism of nonradiative energy loss in TMDs, though multibody Auger recombination also competes to diminish excited-state lifetimes. , TRPEEM measurements have the required temporal and spatial resolution necessary to successfully map nanometer size defect locations and their effects on excited carriers. This is especially needed considering the wide variety of flake shapes that monolayer TMDs can assume through tailored growth methods.…”
Section: Dynamic Pump−probe Measurement Techniquesmentioning
confidence: 99%
“…Up to now, several state-of-the-art techniques, such as scanning ultrafast electron microscopy (SUEM), [22] scanning nearfield optical microscopy (SNOM), electron energy loss spectroscopy (EELS), and cathodoluminescence nanoscopy, have been demonstrated as powerful tools for studying electromagnetic waves on the nanoscale. In addition, photoemission electron microscopy (PEEM) [23][24][25][26][27][28][29] is a nonscanning high-spatial-resolution instrument that collects photoelectrons to image. The PEEM is a powerful tool for studying the surface wave modes of materials.…”
Section: Introductionmentioning
confidence: 99%
“…In this study, we aimed to clarify the dynamics of the excited electrons in the TADF process of a 4CzIPN solid‐state film, employing time‐resolved photoemission electron microscopy (TR‐PEEM) [ 29–36 ] (Figure 1a) and comparing it with TR‐PL. A significant advantage of the TR‐PEEM technique is the high sensitivity for the photoelectron signal.…”
Section: Introductionmentioning
confidence: 99%
“…The detection of such excited species is generally difficult even when using a transient absorption spectroscopic (TAS) technique, which is often employed to study optically dark excitonic species, including ionic ones. [28] In this study, we aimed to clarify the dynamics of the excited electrons in the TADF process of a 4CzIPN solid-state film, employing time-resolved photoemission electron microscopy (TR-PEEM) [29][30][31][32][33][34][35][36] (Figure 1a) and comparing it with TR-PL. A significant advantage of the TR-PEEM technique is the high sensitivity for the photoelectron signal.…”
Section: Introductionmentioning
confidence: 99%