Simultaneous quantum dash-well emission in a chirped dash-in-well superluminescent diode with spectral bandwidth &gt;700 nm

Khan, M. Z. M.; Majid, M. A.; Ng, Tien Khee; Cha, Dongkyu; Ooi, Boon S.

doi:10.1364/ol.38.003720

Cited by 10 publications

(9 citation statements)

References 19 publications

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“…2(a) depicts the measured photocurrent for the −8 V case as a function of wavelength wherein four distinct humps can be observed corroborating well with the wavelengths of the peaks of the α spectrum since maximum absorption takes place at these peaks resulting in a surge in the collected photocurrent represented by these humps. In our previous work [21], only two peaks were shown for this structure's absorption spectrum, measured by from segment-contact method, which at a first glance seemed to be not in compliance with our measurements here. Nevertheless, after close inspection, we attributed that junction heating due to direct current operation played a significant role in changing the absorption profile.…”

Section: Electro-absorption Characteristicscontrasting

confidence: 93%

“…In order to facilitate discussion in the subsequent section, different QDash stacks are designated here according to their sizes as: large dash (LD) group corresponding to the overgrown dashes of the two 10-nm barriers, in addition to medium dash (MD) and small dash (SD) ensembles of the 15-and 20-nm barriers, respectively. It is to be noted that due to the high possibility of coupling between the top two QDash stacks (10 nm barrier thickness) in addition to their overlapped density of states (DoS) [20], a collective single LD group is considered [21]. Fig.…”

Section: Methodsmentioning

confidence: 99%

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Electro-absorption and Electro-optic Characterization of L-Band InAs/InP Quantum-dash Waveguide

et al. 2020

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Electro-absorption and electro-optic characteristics of InAs/InP quantum-dash active region-based waveguide, emitting at ∼1600 nm is investigated. Two major peaks were observed in the change of absorption spectrum with a maximum value of 7070 cm −1 at a bias voltage of-8V with an excellent uniform extinction ratio of ∼15 dB across the wavelength range of operation (1460-1620 nm). The effect of temperature on electro-absorption (EA) measurement suggests a strong influence resulting in merging of two major change of absorption spectrum peaks with higher temperature. Furthermore, electro-optic measurements indicate a change in refractive index and its efficiency values of ∼2.9 × 10 −4 and ∼0.5 × 10 −4 V −1 , respectively, hence exhibiting a low chirping factor of 0.9 and 1.5 at bias voltages of −2 V and −4 V, respectively. As a quasi-three-dimensionally confined structure possessing both quantum well-and quantum dot-like features, the quantum dash waveguide showed superior electro-absorption and electro-optic properties compared to quantum dots and close to that of quantum wells, while attaining low chirp and broad wavelength range of operation. This paves a way for potential realization of quantum dash-based EA and electro-optic modulator for future optical access networks, particularly operating in wide Cto L-band region.

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Section: Electro-absorption Characteristicscontrasting

confidence: 93%

Section: Methodsmentioning

confidence: 99%

Electro-absorption and Electro-optic Characterization of L-Band InAs/InP Quantum-dash Waveguide

et al. 2020

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“…This investigation showed a significant improvement in the PBP values while maintaining the spectral ripple below 0.3 dB. In the CW operation, Khan et al [9] provided a quantitative evidence of simultaneous amplified spontaneous emission from InGaAlAs Qwell and InAs Qdashes from multistack DaWELL structure by demonstrating a record emission bandwidth of > 700 nm at room temperature from a broad area 50×1000 µ m 2 SLD device with output power > 0.3 mW and capability of reaching beyond 1.3 mW. As shown in Fig.…”

Section: Inas/inp Qdash Superluminescent Diodesmentioning

confidence: 52%

“…T he emission spectra in (a), (c) and (d) are vertically offset for clarity. Courtesy of [9,362,363] …”

Section: Inas/inp Qdash Superluminescent Diodesmentioning

confidence: 99%

“…This will enable broadband SOAs, electro-absorption modulator, photodetector to be implemented as an integral part of the DWDM technologies. An ultrabroad gain profile of > 300 nm from Qdash active elements, as well as lasing and amplified spontaneous emission (ASE) bandwidths crossing more than 50 nm and 700 nm, respectively, from lasers and superluminescent diodes (SLD) are two examples of the recent significant developments in this field of study [5,8,9]. Broadband nature of the InAs/InP Qdot and Qdash laser diodes has been exploited to generate ultra-short femto-second pulses of 158 fs at 2.21THz based on the passive mode-locked scheme [10,11] which find important applications particularly in high speed optical time-domain multiplexer (OTDM), wavelength division multiplexed (WDM) communications, and optical clocking to replace electronic clocking in high-speed electronic circuits, such as a microprocessor.…”

Section: Introductionmentioning

confidence: 99%

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Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Fabrication and characteristics of high speed InGaAs/GaAs quantum-wells superluminescent diode emitting at 1053 nm

Duan

Fang

Zhang³

et al. 2014

Semicond. Sci. Technol.

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A high speed 1053 nm superluminescent diode (SLD) with a ridge-waveguide structure has been fabricated for the first time to the best of our knowledge. InGaAs/GaAs quantum well epitaxial structure, the etched depth of the insulation channel and the area of p-side electrode were optimized to enhance the modulation bandwidth of the SLD. Bend-waveguide unpumped absorbing region structure and facet coating methods have been adopted to suppress the lasing oscillation. As a result, a −3 dB cutoff frequency of 1.7 GHz is obtained at a dc bias current of 100 mA and 25 • C heat-sink temperature, corresponding to 2.5 mW output power from single-mode fiber with spectral modulation of less than 0.15 dB and spectral width of 24 nm. The SLD module shows a good reliability.

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Simultaneous quantum dash-well emission in a chirped dash-in-well superluminescent diode with spectral bandwidth >700 nm

Abstract: BS (2013) Simultaneous quantum dash-well emission in a chirped dash-in-well superluminescent diode with spectral bandwidth >700 nm. Optics Letters 38: 3720.

Cited by 10 publications

References 19 publications

Electro-absorption and Electro-optic Characterization of L-Band InAs/InP Quantum-dash Waveguide

Electro-absorption and Electro-optic Characterization of L-Band InAs/InP Quantum-dash Waveguide

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Fabrication and characteristics of high speed InGaAs/GaAs quantum-wells superluminescent diode emitting at 1053 nm

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