Simultaneous measurement of the two-photon coefficient and free-carrier cross section above the bandgap of crystalline silicon

Boggess, Thomas F.; Bohnert, K.; Mansour, Kamjou; Moss, S. C.; Boyd, Ian W.; Smirl, Arthur L.

doi:10.1109/jqe.1986.1072964

Cited by 159 publications

(63 citation statements)

References 24 publications

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“…The FCA process involves the absorption by the electron of another photon, and the consequent promotion to a higher state in the conduction band. So, the FCA process can lead to the reduction of transmittance when the incident fluence increases, which has been reported in semiconductor materials such as Cd x Ag 1-x S nanoparticles, [30] crystalline Si, [31] and MoS 2 nanotubules. [32] Although FCA is the accepted OL mechanism, nonlinear scattering cannot be excluded from the OL effect for CuS hollow spheres.…”

Section: Full Papermentioning

confidence: 81%

Nanometer‐Sized Copper Sulfide Hollow Spheres with Strong Optical‐Limiting Properties

Cao

Zhu

et al. 2007

Adv Funct Materials

204

139

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CuS semiconductor nanometer‐sized hollow spheres are successfully synthesized by using a soft‐template method. A possible growth mechanism is proposed. The linear optical property of the CuS hollow spheres is examined by means of photoluminescence spectroscopy at room temperature. The optical‐limiting (OL) property of these nanostructures is characterized by using a nanosecond Q‐switched YAG laser and an optical parametric oscillator pumped with Surelite‐III. A strong OL response is detected for the CuS hollow spheres in both visible and near infrared (NIR) spectral ranges, which makes these promising materials for applications such as the protection of human eyes or as optical sensors for high‐power laser irradiation. The OL mechanism of the CuS hollow‐sphere nanostructure may be the combination of free‐carrier absorption (FCA) and nonlinear scattering.

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Section: Full Papermentioning

confidence: 81%

Nanometer‐Sized Copper Sulfide Hollow Spheres with Strong Optical‐Limiting Properties

Cao

Zhu

et al. 2007

Adv Funct Materials

204

139

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“…The threshold and saturation values of the title compound are comparable to those of C60, which is considered as one of the best optical limiting materials [29]. According to the basic theoretical consideration, the TPA-induced-transmissivity change for a Gaussian transverse distribution laser beam will be expressed [30] as:…”

Section: Optical Limiting Effectsmentioning

confidence: 99%

Synthesis, crystal structure, electrochemical properties and large optical limiting effect of a novel 3-(E)-ferrocenyl-vinyl-N-hexyl carbazole

Wang

Chen

et al. 2007

Transition Met Chem

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The novel compound, 3-(E)-ferrocenyl-vinyl-N-hexylcarbazole (FVHC) was first synthesized and fully characterized by elemental analysis, IR, 1 H-NMR, single-crystal X-ray diffraction, ultraviolet (UV) absorption, cyclic voltammograms (CV) and optical limiting (OL) measurements. The result of single crystal X-ray diffraction for the compound reveals that the ferrocenyl and carbazole groups are approximately coplanar, and bridged by double-bond with E configuration, showing that there is a well-delocalized p-electron system in the molecule. The electrochemical investigation indicated that the electron in the FVHC may partially be delocalized over the p-conjugated system and CT process in functionalized carbazole systems. Besides, the compound exhibited strong UV absorption and large optical limiting effect, indicating promising potential applications as useful OL materials.

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“…Boggess et al first discovered that an electron can absorb two photons (having individual energies below the semiconductor band gap) approximately at the same time, and reach the excited state in the conduction band [128]. Reintjes et al first measured the TPA coefficient β = 1.5 cm/GW using 1060 nm picosecond laser pulse [129].…”

Section: All-si Pdsmentioning

confidence: 99%

State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

2015

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Photodetectors hold a critical position in optoelectronic integrated circuits, and they convert light into electricity. Over the past decades, high-performance photodetectors (PDs) have been aggressively pursued to enable high-speed, large-bandwidth, and low-noise communication applications. Various material systems have been explored and different structures designed to improve photodetection capability as well as compatibility with CMOS circuits. In this paper, we review state-of-theart photodetection technologies in the telecommunications spectrum based on different material systems, including traditional semiconductors such as InGaAs, Si, Ge and HgCdTe, as well as recently developed systems such as low-dimensional materials (e.g. graphene, carbon nanotube, etc.) and noble metal plasmons. The corresponding material properties, fundamental mechanisms, fabrication, theoretical modelling and performance of the typical PDs are presented, including the emerging directions and perspectives of the PDs for optoelectronic integration applications are discussed.

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Simultaneous measurement of the two-photon coefficient and free-carrier cross section above the bandgap of crystalline silicon

Cited by 159 publications

References 24 publications

Nanometer‐Sized Copper Sulfide Hollow Spheres with Strong Optical‐Limiting Properties

Nanometer‐Sized Copper Sulfide Hollow Spheres with Strong Optical‐Limiting Properties

Synthesis, crystal structure, electrochemical properties and large optical limiting effect of a novel 3-(E)-ferrocenyl-vinyl-N-hexyl carbazole

State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

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