Simultaneous measurement of emissivity and temperature of silicon wafers using a polarization technique

Iuchi, Tohru; Gogami, A.

doi:10.1016/j.measurement.2010.01.004

Cited by 13 publications

(5 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The two emissivity-compensated radiation thermometry methods based on polarization techniques are briefly summarized below since these methods and their experimental setups have previously been described in detail; 8,9 the reduction of the background radiance is described in more detail below because its principle and experimental setup has been only partially introduced previously. 10 Many n-type silicon (100) wafers (thickness: 0.75 mm; diameter: 76.2 mm) were prepared for experiments.…”

Section: Experiments and Resultsmentioning

confidence: 99%

“…We refer to this relation as the R ps -emissivity relationship; it forms the basis for the other emissivity-compensated radiation thermometry methods we proposed. 9 This method is valid over a wide range of conditions (i.e., for a wide range of resistivities, film thicknesses, temperatures, and wavelengths and for θ > 30 • ). These relations confirm that there is a one-to-one quantitative relationship between R ps and the por s-polarized emissivity, even for large variations in the silicon wafer emissivity ε p(s) (θ ).…”

Section: B Methods For Simultaneously Measuring Emissivity and Tempermentioning

confidence: 99%

“…The primary factors that contribute to the uncertainties are the hybrid surface temperature sensor used to monitor the surface temperature of the silicon wafer, 11 the measurement principle, and the polarized radiometers. The expanded uncertainty U c = ku c (k = 2) was less than 5 • C. 8,9 A possible cause for the validity of the emissivitycompensated radiation thermometry methods is that the refractive indices of the dielectric films (SiO 2 and Si 3 N 4 ) vary very little and their extinction coefficients are negligible at high temperatures, which make the films transparent. 12,13 …”

Section: B Methods For Simultaneously Measuring Emissivity and Tempermentioning

confidence: 99%

“…9 We then develop a method that greatly reduces the background radiance by separating the radiance from the wafer surface from the radiance from the lamps. 10 A system that combines the emissivity-compensated radiation thermometry method and the method for shielding the background radiance is promising for practical application to temperature measurements during manufacturing processes.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

A method of reducing background radiance for emissivity-compensated radiation thermometry of silicon wafers

Iuchi

Toyoda

Seo³

2013

Review of Scientific Instruments

View full text Add to dashboard Cite

We studied the spectral and directional emissivities of silicon wafers using an optical polarization technique. Based on simulation and experimental results, we developed two radiation thermometry methods for silicon wafers: one is based on the polarized emissivity-invariant condition and the other is based on the relationship between the ratio of the p- and s-polarized radiance and the polarized emissivity. These methods can be performed at temperatures above 600 °C and over a wide wavelength range (0.9-4.8 μm), irrespective of the dielectric film thickness and the substrate resistivity, which depends on the dopant concentration. The temperature measurements were estimated to have expanded uncertainties (k = 2) of less than 5 °C. With a view to practically applying these methods, we investigated a method to reduce the intense background radiance produced by high-intensity heating lamps. We found that the background radiance can be greatly reduced by using a radiometer that is sensitive to wavelengths of 4.5 or 4.8 μm and suitable geometrical arrangements of a quartz plate. This opens up the possibility of using the two proposed radiation thermometry methods in practical applications.

show abstract

Section: Experiments and Resultsmentioning

confidence: 99%

Section: B Methods For Simultaneously Measuring Emissivity and Tempermentioning

confidence: 99%

Section: B Methods For Simultaneously Measuring Emissivity and Tempermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A method of reducing background radiance for emissivity-compensated radiation thermometry of silicon wafers

Iuchi

Toyoda

Seo³

2013

Review of Scientific Instruments

View full text Add to dashboard Cite

show abstract

“…Infrared emissivity measurement methods are typically divided into two categories, namely, direct and indirect methods. Direct methods mainly include calorimetry [ 2 ], the energy method [ 3 ], and the multi-wavelength method [ 4 ], whereas indirect methods are mostly based on reflectometry [ 5 ]. A variety of emissivity measuring instruments have been designed according to these principles [ 6 , 7 , 8 , 9 ], which have achieved good measurement performance at high temperatures.…”

Section: Introductionmentioning

confidence: 99%

Study on Method for Measuring Coating Emissivity by Applying Active Irradiation Based on Infrared Thermal Imager

Zhang

Chen

et al. 2022

Sensors

View full text Add to dashboard Cite

To achieve rapid and precise non-contact measurements of coating emissivity at room temperature, a measurement method based on infrared thermal imager was proposed. By applying two irradiations with different energies to the target and reference surfaces, the influences of atmospheric transmittance, radiation of the target itself, environmental radiation, and atmospheric path radiation were eliminated, thereby enabling accurate emissivity measurement. Experiments were designed for validation with a mid-wave infrared thermal imager and a surface blackbody as the radiation source. Several combinations of irradiation energy were set to investigate the effects of average energy and energy difference between the two irradiations on the measured results. The normal emissivity of the coated sample plate in the mid-wave band was measured to generate the image of coating surface emissivity. Then, the emissivity measurement results of the proposed method were compared with those of the energy method and the point emissivity measuring instrument under the same conditions, and the comparison indicated that the proposed method can effectively measure the emissivity of coating. Some factors causing measurement errors were analyzed. Finally, an experiment was designed to compare the measurement speed between the proposed method and the currently used methods, and the experimental results were analyzed.

show abstract

An Apparatus for the Directional Spectral Emissivity Measurement in the Near Infrared Band

Tong

Zhang

et al. 2021

Int J Thermophys

View full text Add to dashboard Cite

Simultaneous measurement of emissivity and temperature of silicon wafers using a polarization technique

Cited by 13 publications

References 9 publications

A method of reducing background radiance for emissivity-compensated radiation thermometry of silicon wafers

A method of reducing background radiance for emissivity-compensated radiation thermometry of silicon wafers

Study on Method for Measuring Coating Emissivity by Applying Active Irradiation Based on Infrared Thermal Imager

An Apparatus for the Directional Spectral Emissivity Measurement in the Near Infrared Band

Contact Info

Product

Resources

About