Abstract:We studied the spectral and directional emissivities of silicon wafers using an optical polarization technique. Based on simulation and experimental results, we developed two radiation thermometry methods for silicon wafers: one is based on the polarized emissivity-invariant condition and the other is based on the relationship between the ratio of the p- and s-polarized radiance and the polarized emissivity. These methods can be performed at temperatures above 600 °C and over a wide wavelength range (0.9-4.8 μ… Show more
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