Simultaneous and Independent Measurement of Stress and Temperature Using a Single Field-Effect Transistor Structure

Doelle, M.; Held, J.; Ruther, Patrick; Oliver, Paul

doi:10.1109/jmems.2007.904334

Cited by 16 publications

(14 citation statements)

References 40 publications

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“…Piezoresistive effect of thin film FET has been studied in several papers [1][2][3][4][5][6][7]. It shows that the stress-induced carrier mobility change result in the change of drian-source current.…”

Section: Fabricationmentioning

confidence: 99%

Electrical characteristic of thin film FET under temperature and Gpa order stress

Wang

Liu

et al. 2012

2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3m-Nano)

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In this paper, thin film FET has been fabricated at the root of a beam, where is the maximum stress area when the beam bended. Probe has been used to bend the beam and produce large mechanical stress, which is in Gpa order. Electrical characteristic of thin film FET under GPa stress and different temperature has been studied. The maximum I DS /I DS at Gpa stress is up to -31.35%. The device stopped work when 100 o C temperature and 1.75Gpa stress applied. A "mutation point" at 2.4 V at output curve of the FET after released has been observed.

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Section: Fabricationmentioning

confidence: 99%

Electrical characteristic of thin film FET under temperature and Gpa order stress

Wang

Liu

et al. 2012

2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3m-Nano)

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“…The normal stress oay generated by the 4PBB as a function of the displacement Ad of the inner supports is given by [4,10] (Ad) =3 Ad Es1 t 2 Lo2 +6L0 Li (5) where Esi, t, LO, and Li denote Young's modulus of silicon, the thickness of the beam, and the distances between inner and outer supports and between the center and the inner supports, respectively. Figure3 shows a silicon strip containing the test structures mounted in the 4PBB and the connections to external circuitry.…”

Section: Theory and Operation Modementioning

confidence: 99%

“…To integrate larger numbers of stress sensors in mixed-signal CMOS chips, piezo-FETs are superior to diffused piezoresistors since the gate contact serves as an intrinsic switch. A chip with 32 n-type piezo-FETs [4] and a method for accurately extracting the temperature with piezo-FETs [5] have been reported. In addition, external loads acting on a sensor package can be determined by measuring the stress distribution induced into the package.…”

Section: Introductionmentioning

confidence: 99%

CMOS Integrated Stress Mapping Chips with 32 N-Type or P-Type Piezoresistive Field Effect Transistors

Gieschke

Nurcahyo

Herrmann

et al. 2009

2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems

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This paper reports a novel generation of CMOS stress mapping chips comprising 32 square field effect transistors (FET) with four source/drain contacts (piezoFETs) exploiting the shear piezoresistive effect in n-type (NMOS) or p-type (PMOS) inversion layers. The sensor chips with a total die area of 2.5 x 2 mm2 are integrated with analog circuitry and digital logic. When exposed to homogenous shear or normal stress, all 32 integrated stress sensors show a linear response in excellent agreement with theoretical predictions and exhibit identical stress sensitivities. Piezo-FETs fabricated as separate devices are characterized with respect to stress sensitivity, intrinsic offset, and noise behavior. Stress sensitivities are enhanced by incorporating a central hole into the piezo-FETs. Sensitivities of -448 iV/(V MPa) and 477 iV/(V MPa) were measured for NMOS and PMOS devices, respectively.

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“…Recently, technology of multi-axis and high density CMOS strain sensors has been reported [3,4]. In our group, uniaxial tactile imagers with high spatial resolution and multifunctional detection abilities has been developed [5] based on CMOS/MEMS technology.…”

Section: Introductionmentioning

confidence: 99%

Flexible silicon triaxial tactile imager with integrated 800µm-pitch sensor pixel structures on a diaphragm

Takao

Okada

Ishida

et al. 2011

2011 IEEE SENSORS Proceedings

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In this paper, a silicon integrated triaxial tactile imager with 800µm-pitch sensor pixel circuits and its real-time demonstration of slipping motion detection are presented for the first time. Distributions of normal-and shear-force components on contacting object surface are independently detected by the triaxial micro force sensor pixels on a flexible silicon diaphragm. The minimum force resolutions of each triaxial force sensor are below 5mN, and the cross-axis errors are below 3%. The new device structure of triaxial tactile imager can cope with both high spatial/force resolution and high adaptability to the object surface. Also, the beginning point of slipping can be specified by the individually formed fingerprint structures on the highdensity multi-axis force sensor circuits. This is the first triaxial tactile imager which can be compared with human fingertip functions on the sensing performance of slip detection.

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Simultaneous and Independent Measurement of Stress and Temperature Using a Single Field-Effect Transistor Structure

Cited by 16 publications

References 40 publications

Electrical characteristic of thin film FET under temperature and Gpa order stress

Electrical characteristic of thin film FET under temperature and Gpa order stress

CMOS Integrated Stress Mapping Chips with 32 N-Type or P-Type Piezoresistive Field Effect Transistors

Flexible silicon triaxial tactile imager with integrated 800µm-pitch sensor pixel structures on a diaphragm

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Simultaneous and Independent Measurement of Stress and Temperature Using a Single Field-Effect Transistor Structure

Cited by 16 publications

References 40 publications

Electrical characteristic of thin film FET under temperature and Gpa order stress

Electrical characteristic of thin film FET under temperature and Gpa order stress

CMOS Integrated Stress Mapping Chips with 32 N-Type or P-Type Piezoresistive Field Effect Transistors

Flexible silicon triaxial tactile imager with integrated 800&#x00B5;m-pitch sensor pixel structures on a diaphragm

Contact Info

Product

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Flexible silicon triaxial tactile imager with integrated 800µm-pitch sensor pixel structures on a diaphragm