Electrical characteristic of thin film FET under temperature and Gpa order stress

Abstract

In this paper, thin film FET has been fabricated at the root of a beam, where is the maximum stress area when the beam bended. Probe has been used to bend the beam and produce large mechanical stress, which is in Gpa order. Electrical characteristic of thin film FET under GPa stress and different temperature has been studied. The maximum I DS /I DS at Gpa stress is up to -31.35%. The device stopped work when 100 o C temperature and 1.75Gpa stress applied. A "mutation point" at 2.4 V at output curve of the FET after released has been observed.