Simulative Comparison of Polymer and Ceramic Encapsulation on SiC-MOSFET Power Modules under Thermomechanical Load

Wagner, Felix; Maniar, Youssef; Rittner, Martin; Kaessner, S.; Guyenot, M.; Lang, Lukas; Wunderle, Bernhard

doi:10.1109/eurosime.2019.8724587

Cited by 5 publications

(4 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Due to this, the CTE follows the trend of aluminum oxide. Having a small CTE can be beneficial for encapsulation of an electronic module [19]. Very often the high CTE of the polymer encapsulations is one of the reasons why they reach their end of life, e.g., by bond lift-off.…”

Section: Resultsmentioning

confidence: 99%

“…As seen in the dilatometry, the compound introduced here exhibits no glass transition temperature instead, possessing low CTE over the whole range up to 200 °C. Due to this low CTE, it aims for fixation of the bond wires [19] and lower curing shrinkage resulting in less stress induced. Since the stresses under the cyclic load of temperature are one of the major reasons for failure of power electronic devices [19], these properties should provide the electronic part with increased lifetime compared to conventional polymeric encapsulation.…”

Section: Resultsmentioning

confidence: 99%

“…Due to this low CTE, it aims for fixation of the bond wires [19] and lower curing shrinkage resulting in less stress induced. Since the stresses under the cyclic load of temperature are one of the major reasons for failure of power electronic devices [19], these properties should provide the electronic part with increased lifetime compared to conventional polymeric encapsulation. As seen from the dilatometry the CTE is primarily dictated by the filler component.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Sol–gel encapsulation for power electronics utilizing 3-Glycidyloxypropyltriethoxysilane and 3-Mercaptopropyltrimethoxysilane

Kohler

Hejtmann

Henneck

et al. 2022

J Sol-Gel Sci Technol

Self Cite

View full text Add to dashboard Cite

Abstract3-Glycidyloxypropyltriethoxysilane and 3-Mercaptosilane were used to prepare a composite together with aluminum oxide. The compound is a potential candidate for being used as inorganic encapsulation. FTIR results paired with head-space analysis revealed a hardening of the composite at above 130 °C and degradation of the sol–gel-network above 150 °C. The adhesion of these compounds was tested via shear tests. It showed, that the addition of 3-Mercaptopropyltriethoxysilane enhanced the adhesion on silver significantly. This is attributed to the covalent nature of the Ag-S bond, which is forming as compared to the solely dispersive forces, when 3-Mercaptopropyltriethxysilane is not used. By conducting the shear test under temperature activation energies for the breakages were calculated. These coincide well with the binding energy of Ag-S in case silver surfaces are examined. In the case of a copper surface, a mixture of covalent and dipole–dipole interactions are found, since the activation energy for breakage is smaller as the Cu-O bond energy.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Sol–gel encapsulation for power electronics utilizing 3-Glycidyloxypropyltriethoxysilane and 3-Mercaptopropyltrimethoxysilane

Kohler

Hejtmann

Henneck

et al. 2022

J Sol-Gel Sci Technol

Self Cite

View full text Add to dashboard Cite

show abstract

“…The only differences are the EOL criterias used in ALT, and the input data used for reliability modeling. In this paper, the reliability model was prepared based on actual failures recorded during APC test, in contrast to the typically utilized approach [22][23][24].…”

Section: Accelerated Lifetime Testingmentioning

confidence: 99%

Bulletin of the Polish Academy of Sciences: Technical Sciences

Bąba

2021

View full text Add to dashboard Cite

The main drawback of any Design for Reliability methodology is lack of easy accessible reliability models, prepared individually for each critical component. In this paper, a reliability model for SiC power MOSFET in SOT -227B housing, subjected to power cycling, is presented. Discussion covers preparation of accelerated lifetime test required to develop such reliability model, analysis of semiconductor degradation progress, samples post-failure analysis and identification of reliability model parameters. Such model may be further used for failure prognostics or useful lifetime estimation of high performance power supplies.

show abstract

Modeling and simulation methodology for considering delamination and bonding pull out in a SiC MOSFET chip during the short-circuit phase

Dumollard

Batista

Pécastaing

et al. 2021

2021 IEEE 12th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)

View full text Add to dashboard Cite

Simulative Comparison of Polymer and Ceramic Encapsulation on SiC-MOSFET Power Modules under Thermomechanical Load

Cited by 5 publications

References 11 publications

Sol–gel encapsulation for power electronics utilizing 3-Glycidyloxypropyltriethoxysilane and 3-Mercaptopropyltrimethoxysilane

Sol–gel encapsulation for power electronics utilizing 3-Glycidyloxypropyltriethoxysilane and 3-Mercaptopropyltrimethoxysilane

Bulletin of the Polish Academy of Sciences: Technical Sciences

Modeling and simulation methodology for considering delamination and bonding pull out in a SiC MOSFET chip during the short-circuit phase

Contact Info

Product

Resources

About