Simulations on back gate effects of a-Si TFT off-current under illumination

Nishida, Shinichi; Takechi, Kazushige; Hirano, Naoto; Uchida, Hiroyuki

doi:10.1016/0022-3093(93)91107-e

Cited by 3 publications

(1 citation statement)

References 2 publications

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“…According to previous literature, the hump in TFTs has been reported in various cases. Uchida et al and Shur et al have underlined that gate bias stress causes this hump behavior in amorphous silicon TFTs. They observed that it is concerned with the localized states in back channel interface, comparing the results of experimental measurements and a 2-D device simulator.…”

Section: Resultsmentioning

confidence: 99%

Electrical Responses of Artificial DNA Nanostructures on Solution-Processed In-Ga-Zn-O Thin-Film Transistors with Multistacked Active Layers

Jung

Kim

Yoon

et al. 2012

ACS Appl. Mater. Interfaces

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We propose solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) with multistacked active layers for detecting artificial deoxyribonucleic acid (DNA). Enhanced sensing ability and stable electrical performance of TFTs were achieved through use of multistacked active layers. Our IGZO TFT had a turn-on voltage (V(on)) of -0.8 V and a subthreshold swing (SS) value of 0.48 V/decade. A dry-wet method was adopted to immobilize double-crossover DNA on the IGZO surface, after which an anomalous hump effect accompanying a significant decrease in V(on) (-13.6 V) and degradation of SS (1.29 V/decade) was observed. This sensing behavior was attributed to the middle interfaces of the multistacked active layers and the negatively charged phosphate groups on the DNA backbone, which generated a parasitic path in the TFT device. These results compared favorably with those reported for conventional field-effect transistor-based DNA sensors with remarkable sensitivity and stability.

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Section: Resultsmentioning

confidence: 99%