Simulation study of the a-Si:H/nc-Si:H solar cells performance sensitivity to the TCO work function, the band gap and the thickness of i-a-Si:H absorber layer

Belfar, A.

doi:10.1016/j.solener.2015.02.010

Cited by 19 publications

(7 citation statements)

References 30 publications

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“…Model lapisan "bulk" dalam AFORS-HET untuk menjelaskan model matematis sel surya p-i-n menggunakan model Standar Semikonduktor [16] ) ditentukan berdasarkan nilai fungsi kerja WFTCO [17]. Asumsi bahwa pada bagian belakang struktur sel surya tidak disertai dengan pemantul belakang (RB), sehingga koefisien refleksinya 0, dan koefisien refleksi kontak depan (RF) dibuat sekitar 0.2 [18]. Sumber cahaya yang digunakan dalam simulasi menggunakan AM1.5G dengan rapat daya penyinaran (power density) 100 mW/cm 2 dan temperatur operasional perangkat sel surya dipertahankan pada 300 K. Dalam simulasi, pengaruh rapat cacat DB pada lapisan (p)a-Si:H terhadap kinerja sel surya ditinjau berdasarkan hasil eksperimen, yaitu antara 5.0 x 10 17 -5.0 x 10 19 cm -3 /eV yang dioperasikan dengan ketebalan lapisan (p)a-Si:H pada 10, 15 dan 20 nm yang dianalisis menggunakan kurva J-V, diagram pita energi, profil medan listrik, dan profil konsentrasi muatan [19].…”

Section: Metode Penelitianunclassified

Pengaruh Rapat Cacat Dangling-Bond Lapisan (p)a-Si:H Pada Kinerja Sel Surya Struktur p-i-n

Hamdani

2022

JIIF

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Validasi numerik terhadap sel surya homojunction berbasis a-Si:H hasil eksperimen secara fisis dianalisis menggunakan perangkat AFORS-HET (Automat FOR Simulation of HETerostructure) dengan meninjau pengaruh cacat dangling-bond (DB) pada lapisan (p)a-Si:H (Ntr) terhadap kinerja sel surya struktur TCO/(p)a-Si:H/(i)a-Si:H/(n)a-Si:H/Ag. Variasi Ntr diberikan sesuai dengan hasil eksperimen antara 5.0 x 10 17 -5.0 x10 19 cm -3 /eV yang dioperasikan pada ketebalan lapisan-p berbeda disertai dengan analisis diagram pita energi, kurva karakteristik J-V, profil medan listrik, dan konsentrasi pembawa muatan. Hasil simulasi menunjukkan bahwa sel surya bekerja secara optimum jika nilai parameter Ntr mampu dikontrol untuk nilai <5.0 x 10 18 cm -3 /eV, dimana pada kondisi ini efisiensi yang bisa dicapai sekitar 7.68% (VOC = 947.2 mV, JSC = 10.84 mA/cm 2 ; FF = 74.82%) pada ketebalan lapisan-p sekitar 10 nm.

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Section: Metode Penelitianunclassified

Pengaruh Rapat Cacat Dangling-Bond Lapisan (p)a-Si:H Pada Kinerja Sel Surya Struktur p-i-n

Hamdani

2022

JIIF

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“…As an example, at the p/i-layer interface a barrier originates due to the band offsets and a spike-like discontinuity in the valence band is formed, where the photogenerated holes accumulate. 35,36 The presence of a highly doped p-layer and a buffer layer in between the p-and the i-layer, along with optimum optoelectronic properties and thicknesses of these layers help in reducing the spike and facilitate the collection of holes at the front contact. 37 In our case, where the conditions are not optimized for the P-BR substrate, we ascribe the occurrence to the non-conformal film growth resulting from the distribution of the layers overlying the textures over an increased Fig.…”

Section: A-si:h Solar Cells Performancementioning

confidence: 99%

Novel back-reflector architecture with nanoparticle based buried light-scattering microstructures for improved solar cell performance

Desta

Ram

Rizzoli³

et al. 2016

Nanoscale

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A new back-reflector architecture for light-management in thin-film solar cells is proposed that includes a morphologically smooth top surface with light-scattering microstructures buried within. The microstructures are pyramid shaped, fabricated on a planar reflector using TiO2 nanoparticles and subsequently covered with a layer of Si nanoparticles to obtain a flattened top surface, thus enabling growth of good quality thin-film solar cells. The optical properties of this back-reflector show high broadband haze parameter and wide angular distribution of diffuse light-scattering. The n-i-p amorphous silicon thin-film solar cells grown on such a back-reflector show enhanced light absorption resulting in improved external quantum efficiency. The benefit of the light trapping in those solar cells is evidenced by the gains in short-circuit current density and efficiency up to 15.6% and 19.3% respectively, compared to the reference flat solar cells. This improvement in the current generation in the solar cells grown on the flat-topped (buried pyramid) back-reflector is observed even when the irradiation takes place at large oblique angles of incidence. Finite-difference-time-domain simulation results of optical absorption and ideal short-circuit current density values agree well with the experimental findings. The proposed approach uses a low cost and simple fabrication technique and allows effective light manipulation by utilizing the optical properties of micro-scale structures and nanoscale constituent particles.

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“…Numerical simulation is very useful method to evaluate and understand the device performance by designing the various solar cell structures and varying parameters such as thickness, interface defects, bandgap, defect density of a-Si:H layers and c-Si substrates, different transparent conducting oxide layers, work function of the layers [8][9][10][11][12][13][14][15][16]. This simulation can give understanding of the concepts, save lots money and time before starting the experimental trials to fabricate devices and improve the device performance.…”

Section: Introductionmentioning

confidence: 99%

Influence of Defect States and Thickness of Interface Layer On High Efficiency of c-Si/a-Si:H Heterojunction Solar Cells With Higher Bandgap a-Si:H(p) Layer By Simulation

Kanneboina

2021

Preprint

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This paper presents the influence of defect states and thickness of interface layer on high efficiency of c-Si/a-Si:H heterojunction solar cells with higher bandgap emitter a-Si:H(p) layer by AFORSHET simulation tool. At first, the performance of Ag/ZnO/a-Si:H(p)/ a-Si:H(i)/ c-Si(n)/ a-Si:H(i)/ a-Si:H(n)/Ag heterojunction solar cells was studied by altering the thickness of a-Si:H(p) and a-Si:H(i) layers. The best values of open circuit voltage (Voc) (764.8 mV), short circuit current density (Jsc) (43.15 mA/cm2), fill factor (FF) (85.71) and efficiency(ɳ) (28.28%) were obtained at 3 nm of a-Si:H(p) and a-Si:H(i) layer. In the same structure, c-Si(n) interface was introduced in between c-Si(n) and a-Si:H(i) layer. It is found that the solar cell performance was not changed by varying defect density from 109-1014 cm-3 for thin (5 and 10 nm) interface layer and estimated values are 761.7 mV, 38.83 mA/cm2, 86.09%, 25.46% correspond to Voc, Jsc, FF, ɳ respectively. For very thick interface layer, defect density has shown huge impact on the device performance. At 1 µm, the Voc, FF and ɳ values have been changed from 760.2 to 653.2 mV, 85.9 to 80.76% and 22.94 to 18.47% for the defect density of 109 to 1014 cm-3 respectively.

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Simulation study of the a-Si:H/nc-Si:H solar cells performance sensitivity to the TCO work function, the band gap and the thickness of i-a-Si:H absorber layer

Cited by 19 publications

References 30 publications

Pengaruh Rapat Cacat Dangling-Bond Lapisan (p)a-Si:H Pada Kinerja Sel Surya Struktur p-i-n

Pengaruh Rapat Cacat Dangling-Bond Lapisan (p)a-Si:H Pada Kinerja Sel Surya Struktur p-i-n

Novel back-reflector architecture with nanoparticle based buried light-scattering microstructures for improved solar cell performance

Influence of Defect States and Thickness of Interface Layer On High Efficiency of c-Si/a-Si:H Heterojunction Solar Cells With Higher Bandgap a-Si:H(p) Layer By Simulation

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