Simulation Study of Single-Event Burnout Reliability for 1.7-kV 4H-SiC VDMOSFET

Luo, Jia-Hao; Wang, Ying; Bao, Meng-Tian; Li, Xingji; Yang, Jianqun; Cao, Fei

doi:10.1109/tdmr.2022.3188235

Cited by 5 publications

(4 citation statements)

References 35 publications

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“…The heavy ion incidence model is introduced within the physics module. In the 2D simulation, the generation rate of electron-hole pairs can be obtained from the following equation: [14] Rate (l,…”

Section: Setting Of Experimental Conditionsmentioning

confidence: 99%

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Feng 冯,

Guo 郭,

Liu 刘

et al. 2024

Chinese Phys. B

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In this article, the single event effect (SEE) sensitivity of silicon-germanium heterojunction bipolar transistor (SiGe HBT) device using 100 MeV proton irradiation was investigated. The simulation results indicate that the most sensitive position of the SiGe HBT device is the emitter center, where the proton crosses the larger collector-substrate (CS) junction. Furthermore, this article also conducted experimental studies using 100 MeV proton. In order to consider the influence of temperature on SEE, both simulation and experiments are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current is significantly reduced. Notably, at the same proton flux, there is only one single event transient (SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the 100 MeV proton experiment. To further evaluate the tolerance of the device, the impact of proton on SiGe HBT after gamma-ray (60Coγ) irradiation was investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

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Section: Setting Of Experimental Conditionsmentioning

confidence: 99%

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Feng 冯,

Guo 郭,

Liu 刘

et al. 2024

Chinese Phys. B

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“…The design of the 1.7-kV basic SiC VDMOSFET parameter refers to [ 31 , 32 ]. The main parameters are shown in Table 1 .…”

Section: Description Of Device Structure and Simulationmentioning

confidence: 99%

A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET

Nie,

Wang,

et al. 2023

Micromachines

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Due to its high thermal conductivity, high critical breakdown electric field, and high power, the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has been generally used in industry. In industrial applications, a common reliability problem in SiC MOSFET is avalanche failure. For applications in an avalanche environment, an improved, vertical, double-diffused MOSFET (VDMOSFET) device has been proposed. In this article, an unclamped inductive switching (UIS) test circuit has been built using the Mixed-Mode simulator in the TCAD simulation software, and the simulation results for UIS are introduced for a proposed SiC-power VDMOSFET by using Sentaurus TCAD simulation software. The simulation results imply that the improved VDMOSFET has realized a better UIS performance compared with the conventional VDMOSFET with a buffer layer (B-VDMOSFET) in the same conditions. Meanwhile, at room temperature, the modified VDMOSFET has a smaller on-resistance (Ron,sp) than B-VDMOSFET. This study can provide a reference for SiC VDMOSFET in scenarios which have high avalanche reliability requirements.

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“…In addition, compared to fluorescent nuclear track detectors and polymer nuclear track detectors, silicon carbide detectors are smaller and easier to integrate than other detectors. These properties make SiC become the primary material for fabricating radiation-tolerant and high-temperature-resistant alpha particle detectors [6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Transient behaviour analysis in silicon carbide alpha particle detector using TCAD and SRIM simulation

He,

Cao,

et al. 2024

Phys. Scr.

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Time response characteristics of α particle detector is crucial for monitoring radiation fields varied with time and its characterization of pulse radiation field. Here, SRIM-informed TCAD simulation is utilized to visually investigate the transient behaviors of carrier and alpha particles in 4H-SiC Schottky barrier detectors for the time response characteristics. We identified external bias voltage and incident particle energy as key factors to influence transient current pulse broadening. Low-energy alpha particles result in low initial kinetic energy of the ionization-generated carriers, leading to transient current broadening and reduced time resolution characteristics. Conversely, high-energy alpha particles ionize carrier with high drift velocity, preventing the broadening effect. Our simulation provides a planform and valuable guidance for optimizing alpha particle detector, selecting appropriate bias voltages, and enhancing time resolution capabilities.

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Simulation Study of Single-Event Burnout Reliability for 1.7-kV 4H-SiC VDMOSFET

Cited by 5 publications

References 35 publications

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET

Transient behaviour analysis in silicon carbide alpha particle detector using TCAD and SRIM simulation

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