Simulation Study of Dual Metal-Gate Inverted T-Shaped TFET for Label-Free Biosensing

Wang, Yunqi; Li, Cong; Li, Ouwen; Cheng, Shanlin; Liu, Weifeng; You, Hailong

doi:10.1109/jsen.2022.3195180

Cited by 27 publications

(9 citation statements)

References 27 publications

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“…Although the 5 nm cavity thickness is insufficient for biomolecule conjugation processes, it is accessible for the low‐hydrated biomolecules involved above (these molecules are in nanometer size, 30 such as, the width of DNA is 1–3 nm and the size of low‐hydrated protein is 1–10 nm). In addition, we focus on analyzing the response of biosensor to different biomolecules, and many researches have selected cavities of about 5 nm thickness 15,16,18–21,23 …”

Section: Resultsmentioning

confidence: 99%

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InN TFET with extended gate for high sensitivity label‐free biosensor

Ren,

Zhao,

Guan

et al. 2023

Int J Numerical Modelling

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An extended gate tunneling field effect transistor (EG‐TFET) with narrow bandgap material InN as a label‐free dielectric modulated biosensor is proposed and investigated. An optimum structure of the proposed InN TFET is given by comparing on‐state and ambipolar current. The on‐state current is improved by increasing the length of source overlap, for the rate of forward tunneling increases. Further, the ambipolar current is suppressed by increasing the length of drain offset, for the rate of backward tunneling decreases. A cavity under the gate electrode is formed for sensing biomolecules by dielectric modulation. The performance of EG‐TFET biosensor corresponding to varied dielectric constants of biomolecule is analyzed. In addition, the impacts of charge density and partial filled cavity on the drain current sensitivity are investigated. The electric field, surface potential and energy band profiles are used to explain the working principle of the EG‐TFET biosensor. The simulations reveal that the drain current sensitivity is 3.72 × 107 when neutral biomolecule with κ = 12 is immobilized in the cavity. A linearity fit verification is given, and the results of current sensitivity reveal a good linearity of the EG‐TFET biosensor with fitness coefficient γ2 > 0.99.

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Section: Resultsmentioning

confidence: 99%

“…In addition, we focus on analyzing the response of biosensor to different biomolecules, and many researches have selected cavities of about 5 nm thickness. 15,16,[18][19][20][21]23 3.1 | Impact of the device structure on drain current…”

Section: Parameter Dimensionmentioning

confidence: 99%

InN TFET with extended gate for high sensitivity label‐free biosensor

Ren,

Zhao,

Guan

et al. 2023

Int J Numerical Modelling

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“…A comprehensive summary of this comparison can be seen in table 4. The sensitivity of the suggested N + pocket doped Hetero Dielectric JLTFET is assessed against with different biosensors that have been suggested in previous studies [1,5,18,[43][44][45][46][47][48][49][50][51][52][53][54][55][56][57][58]. Numerous improved structures have been claimed to improve sensitivity.…”

Section: Random Bonding Arrangement Of Biomolecules In the Nanogapsmentioning

confidence: 99%

Design and analysis of hetero-dielectric Junctionless-TFET(JL-TFET) with N⁺ pocket as label free biosensors

Kumawat,

Gopal,

Varma

2024

Phys. Scr.

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This paper includes sensitivity assessment of label-free biosensors using hetero dielectric Junctionless-TFET (HD-JL-TFET) thorough TCAD simulator. The fundamental structure, operation and design of a Junctionless-TFET (HD-JL-TFET) as biosensor are investigated in this paper. For the purpose of detecting the biomolecule, a nano-gap is added close to the source end between the gate and channel. To test the sensing potential, we adjusted the charge density and material dielectric constant (K) by comprehensive calibrated device simulation. For several biomolecules, the device's sensitivity was examined as surface potential, electron tunnelling rate, and conduction-valence band edge fluctuation. Additionally, the Id vs VGS features, the sensitivity to the drain current, and the ION/IOFF fluctuation are also examined. By contrasting neutral or charged biomolecules using various dielectric constants, the sensitivity characteristics of positive, negative, and neutral biomolecules are examined. The development of biosensors, which enable the rapid and precise detection of multiple biomolecules, has revolutionized the field of bioanalysis.

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“…However, most of the research is conducted to better improve the electrical parameters of TFETs. These design changes in conventional TFETs are done to mitigate these inherent flaws and enable them for a wider range of applications such as photosensors [11], biosensors [12], using Mg 2 Si source heterojunction DG-TFET gas sensors by changing the work function of the metal gate [13,14], energy harvesting [15] etc.…”

Section: Introductionmentioning

confidence: 99%

Optical FOMs of extended-source DG–TFET photodetector in the visible range of the spectrum

Tiwari

Chonzom²,

Saha³

2023

Semicond. Sci. Technol.

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In this paper, the optical characteristics of Extended Source Double Gate Tunnel Field Effect Transistor (ESDG-TFET) based photo detector is studied in the visible range of spectrum for wavelength (300-700) nm. The optical characteristics are examined at three specific wavelength = 300, 500, and 700 nm with an Intensity of 0.7W/cm2. The optical behavior of photosensor like absorption rate, generation rate, energy band profiles, transfer characteristics, sensitivity (Sn), quantum efficiency (), signal to noise ratio (SNR), and Detectivity are extracted according to the incident wavelength of light. Results reveal that ESDG-TFET based photosensor exhibits the better optical characteristics at 300 nm compared to 500 and 700 nm. It is found that proposed photosensor provides sensitivity, SNR, and responsivity in the order of 91.2, 79 (dB), and 0.74 (A/Watt), respectively at = 300 nm. Due to high incident optical energy (Eg) at 300 nm, the absorption and emission rate of this photosensor are significantly large and consequently, it reports better optical characteristics. Finally, a comparative study of proposed TFET based photosensor with photosensor cited in literature are summarized in tabular form. A comparison study in terms of spectral sensitivity between single gate and double gate ESDG-TFET is reported. Moreover, an inverter circuit based on ESDG-TFET is designed and the corresponding transient analysis are highlighted under both dark and light states.

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Simulation Study of Dual Metal-Gate Inverted T-Shaped TFET for Label-Free Biosensing

Cited by 27 publications

References 27 publications

InN TFET with extended gate for high sensitivity label‐free biosensor

InN TFET with extended gate for high sensitivity label‐free biosensor

Design and analysis of hetero-dielectric Junctionless-TFET(JL-TFET) with N⁺ pocket as label free biosensors

Optical FOMs of extended-source DG–TFET photodetector in the visible range of the spectrum

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Simulation Study of Dual Metal-Gate Inverted T-Shaped TFET for Label-Free Biosensing

Cited by 27 publications

References 27 publications

InN TFET with extended gate for high sensitivity label‐free biosensor

InN TFET with extended gate for high sensitivity label‐free biosensor

Design and analysis of hetero-dielectric Junctionless-TFET(JL-TFET) with N+ pocket as label free biosensors

Optical FOMs of extended-source DG–TFET photodetector in the visible range of the spectrum

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Design and analysis of hetero-dielectric Junctionless-TFET(JL-TFET) with N⁺ pocket as label free biosensors