Optical FOMs of extended-source DG–TFET photodetector in the visible range of the spectrum

Abstract

In this paper, the optical characteristics of Extended Source Double Gate Tunnel Field Effect Transistor (ESDG-TFET) based photo detector is studied in the visible range of spectrum for wavelength (300-700) nm. The optical characteristics are examined at three specific wavelength = 300, 500, and 700 nm with an Intensity of 0.7W/cm2. The optical behavior of photosensor like absorption rate, generation rate, energy band profiles, transfer characteristics, sensitivity (Sn), quantum efficiency (), signal to noise ratio (SNR), and Detectivity are extracted according to the incident wavelength of light. Results reveal that ESDG-TFET based photosensor exhibits the better optical characteristics at 300 nm compared to 500 and 700 nm. It is found that proposed photosensor provides sensitivity, SNR, and responsivity in the order of 91.2, 79 (dB), and 0.74 (A/Watt), respectively at = 300 nm. Due to high incident optical energy (Eg) at 300 nm, the absorption and emission rate of this photosensor are significantly large and consequently, it reports better optical characteristics. Finally, a comparative study of proposed TFET based photosensor with photosensor cited in literature are summarized in tabular form. A comparison study in terms of spectral sensitivity between single gate and double gate ESDG-TFET is reported. Moreover, an inverter circuit based on ESDG-TFET is designed and the corresponding transient analysis are highlighted under both dark and light states.

Photo sensing analysis of T-shape TFET sensor under visible range of spectrum

“…Moreover, another important optical parameter that determines the availability of noise during optical operation is defined through the signal to noise ratio (SNR) parameter. The mathematical expression to determine the noise parameter is defined as [9,22] It is seen that maximum magnitude of SNR is found of 67.79, 47.38, and 38.3 dB, at corresponding wavelength of 300, 500, and 700 nm, respectively. As maximum value of light energy (E g ) is achieved at λ = 300 nm, which results in optimum number of electron hole pair generation rate, it further enlarge the dark to light current ratio.…”

“…Sentaurus TCAD [21] tool is used to extract the optical properties of T-TFET in the visible region of spectrum [22,23]. A non-local BTBT model is considered to capture the tunneling at the junction of source and channel region.…”