Simulation Study of a Low ON-State Voltage Superjunction IGBT With Self-Biased PMOS

Huang, Jun; Huang, Haimeng; Chen, Xing Bi

doi:10.1109/ted.2019.2917261

Cited by 30 publications

(17 citation statements)

References 8 publications

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“…Moreover, during the data collection process, the static latch-up point was extracted from the forward I-V characteristic curve [7]. In addition, V on was defined as the voltage at the anode when the anode's current density reached a certain set value (J set ), meaning that it could also be extracted from the forward I-V curve at a gate voltage V G of 15 V, with J set defined as 100 A/cm 2 [1]. We simulated the device characteristics of multiple IGBTs with the carrier lifetime of 1µs using the TCAD tool as the total dataset [17].…”

Section: Dataset Generation and Divisionmentioning

confidence: 99%

“…The insulated gate bipolar transistor (IGBT) is widely used in power electronics due to its superior performance [1,2]. Analysis of its static characteristic parameters has always been a key part of the design process, given that these parameters, such as on-state voltage (V on ) and threshold voltage (V th ), can characterize the conduction capability of the device [3,4].…”

Section: Introductionmentioning

confidence: 99%

“…In addition, breakdown voltage (BV), static latch-up voltage (V lu ), and static latch-up current density (J lu ) are helpful when evaluating the safe operating area of the device and its reliability [5][6][7]. Conventionally, technology computer-aided design (TCAD) simulation tools are used to obtain these characteristic parameters of the device before experimental testing because of the advantage of low prediction errors [1][2][3][4]. However, this method may suffer from non-convergence when solving the semiconductor physical equations, thus decreasing the efficiency of obtaining the characteristic parameters.…”

Section: Introductionmentioning

confidence: 99%

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Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network

et al. 2021

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Breakdown voltage (BV), on-state voltage (Von), static latch-up voltage (Vlu), static latch-up current density (Jlu), and threshold voltage (Vth), etc., are critical static characteristic parameters of an IGBT for researchers. Von and Vth can characterize the conduction capability of the device, while BV, Vlu, and Jlu can help designers analyze the safe operating area (SOA) of the device and its reliability. In this paper, we propose a multi-layer artificial neural network (ANN) framework to predict these characteristic parameters. The proposed scheme can accurately fit the relationship between structural parameters and static characteristic parameters. Given the structural parameters of the device, characteristic parameters can be generated accurately and efficiently. Compared with technology computer-aided design (TCAD) simulation, the average errors of our scheme for each characteristic parameter are within 8%, especially for BV and Vth, while the errors are controlled within 1%, and the evaluation speed is improved more than 107 times. In addition, since the prediction process is mathematically a matrix operation process, there is no convergence problem, which there is in a TCAD simulation.

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Section: Dataset Generation and Divisionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network

et al. 2021

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“…22) Numerous research studies have been conducted on the dynamic characteristics of IGBTs. [23][24][25][26][27] The dynamic characteristics are closely related to the capacitance of IGBT. In 2011, Praneet et al reduced the gate capacitance by 50% while increasing the bipolar gain using a terrace gate IGBT.…”

Section: Introductionmentioning

confidence: 99%

A 4H-SiC p-channel insulated gate bipolar transistor with higher breakdown voltage and superior V _F·C _res figure of merit

Wei,

Tian,

Liu

et al. 2024

Jpn. J. Appl. Phys.

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A silicon carbide p-channel insulated gate bipolar transistors (IGBTs) with higher breakdown voltage (BV) and low VF·Cres figure of merit (FOM) have been simulated, fabricated, and characterized successfully. The proposed IGBT adds two n-type implant regions in the junction field effect transistor (JFET) area and increases gate oxide thickness above the JFET area to reduce the reverse transfer capacitance (Cres) and gate oxide electric field (Eox).The proposed structure notably lowers Eox below 3 MV/cm while elevating BV to 16.6 kV. A new FOM of VF·Cres is defined to evaluate the trade-off between the on-state and the Cres characteristics. Experimental results demonstrate that a lower VF·Cres FOM of 0.369 V·pF is achieved from the proposed IGBT with a reduction of 66.4%, compared to the conventional Current Spreading Layer (CSL) IGBT. Meanwhile, the simulated turn-on and turn-off time of the proposed IGBT reduce by 29.4% and 20%, respectively.

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“…n-pillar/p-pillar) uses a relatively high doping concentration [3]. Several improved SJ IGBTs have been proposed to improve further the E off -V CE(sat) tradeoff and reduce the requirement of the doping concentrations in n-and p-pillars by enhancing the carrier-storage effect in the n-pillar [4][5][6][7]. Recently, a new SJ structure with n-Si and p-3C-SiC pillars is proposed and it can be applied in the power MOSFET to reduce the on-state loss and improve the reverse recovery behaviour [8].…”

mentioning

confidence: 99%

Carrier‐storage‐enhanced superjunction IGBT with n‐Si and p‐3C‐SiC pillars

Huang

Yang

et al. 2019

Electron. lett.

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A carrier-storage-enhanced superjunction (SJ) insulated gate bipolar transistor (IGBT) with n-Si and p-3C-SiC pillars (Si/SiC SJ IGBT) is studied. At the on-state, the n-Si/p-SiC heterojunction acts as a barrier for holes in the n-Si pillar, which helps to enhance the carrier-storage effect in the n-Si pillar and improves the tradeoff between turn-off loss (E off) and on-state voltage drop (V CE(sat)). It is found by simulations that V CE(sat) of the Si/SiC SJ IGBT can be 0.35 V lower than that of the conventional SJ IGBT with the same breakdown voltage (V B = 1450 V). Under E off = 5 mJ/cm 2 , V CE(sat) of the Si/SiC SJ IGBT is 1.22 V, which is 0.30 and 0.81 V lower than V CE(sat) of the conventional SJ IGBT and the field stop IGBT, respectively.

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Simulation Study of a Low ON-State Voltage Superjunction IGBT With Self-Biased PMOS

Cited by 30 publications

References 8 publications

Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network

Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network

A 4H-SiC p-channel insulated gate bipolar transistor with higher breakdown voltage and superior V _F·C _res figure of merit

Carrier‐storage‐enhanced superjunction IGBT with n‐Si and p‐3C‐SiC pillars

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Simulation Study of a Low ON-State Voltage Superjunction IGBT With Self-Biased PMOS

Cited by 30 publications

References 8 publications

Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network

Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network

A 4H-SiC p-channel insulated gate bipolar transistor with higher breakdown voltage and superior V F·C res figure of merit

Carrier‐storage‐enhanced superjunction IGBT with n‐Si and p‐3C‐SiC pillars

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Product

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A 4H-SiC p-channel insulated gate bipolar transistor with higher breakdown voltage and superior V _F·C _res figure of merit