Simulation of Ultrasubmicrometer-Gate $\hbox{In}_{0.52} \hbox{Al}_{0.48}\hbox{As/In}_{0.75}\hbox{Ga}_{0.25}\hbox{As/In}_{0.52}\hbox{Al}_{0.48}\hbox{As/InP}$ Pseudomorphic HEMTs Using a Full-Band Monte Carlo Simulator

Ayubi-Moak, J.S.; Ferry, D. K.; Goodnick, Stephen M.; Akis, R.; Saraniti, Marco

doi:10.1109/ted.2007.902902

Cited by 28 publications

(19 citation statements)

References 46 publications

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“…The conduction band offset in the InGaAs/InAlAs interface is 0.53 eV [7]. A length of structures in channel direction, x direction, is 620 nm and thickness in the perpendicular to the channel and intersects layers, y direction, is 48 nm.…”

Section: Simulated Structuresmentioning

confidence: 99%

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Investigation of breakdown voltage in InAlAs/InGaAs/InP HEMTs with different structures

Ohadi

Faez

Hoseini

2010

IEICE Electron. Express

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InAlAs/InGaAs/InP high electron mobility transistors have higher mobility comparing to structures without indium. But existence of indium causes smaller E g and as a result smaller breakdown voltage. However, increasing percentage of indium results in higher mobility and as a result higher current and transconductance. Therefore decreasing percentage of indium causes higher breakdown voltage at the sometime lower transconductance. One of the most important parameters that limit maximum output power of transistor is breakdown voltage. In this paper, InAlAs/InGaAs/InP HEMTs with different structures are simulated and a structure with a good transconductance and breakdown voltage is introduced. Keywords: HEMT, InGaAs, breakdown voltage, channel Classification: Electronic materials, semiconductor materials References[1] T. Mimura, S. Hiyamizu, T. Fujii, and K. Nanbu, "A new field effect transistor with selectively doped GaAs/n-Al

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Section: Simulated Structuresmentioning

confidence: 99%

“…Transistors are simulated at 300 • K. The gate length of transistors is 70 nm and the barrier height of schottky barrier in the gate is 0.8 V [7]. The conduction band offset in the InGaAs/InAlAs interface is 0.53 eV [7].…”

Section: Simulated Structuresmentioning

confidence: 99%

Investigation of breakdown voltage in InAlAs/InGaAs/InP HEMTs with different structures

Ohadi

Faez

Hoseini

2010

IEICE Electron. Express

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“…A detailed description of how it is used to simulate a HEMT with a strained-InGaAs quantum well is given in [6], which also contains some comparison with an experimental device with a similar configuration. More recently, the simulator was used to model an AlGaN/GaN HEMT, in which very good agreement between theory and experiment was achieved for the I-V characteristics and f T [11].…”

Section: Contributedmentioning

confidence: 99%

“…More recently, the simulator was used to model an AlGaN/GaN HEMT, in which very good agreement between theory and experiment was achieved for the I-V characteristics and f T [11]. Other than the changes in the device dimensions, the same parameters for scattering and band structure used in [6] are used here. The effect of strain on the bandstructure is accounted for using a hydrostatic model.…”

Section: Contributedmentioning

confidence: 99%

“…Those experimental devices had 35-nm gate lengths and 75% indium in the quantum well channel and a source-drain spacing (SDS) of 1.5 µm. Through use of a full band Cellular Monte Carlo (CMC) simulator, we found that f T may be greatly enhanced by reducing the overall device length, with f T 's above 1.5 THz obtained for a device with 20 nm gate length and a 500 nm SDS [6]. Further simulations showed that f T can be further enhanced by scaling the gate length and gate to channel distance appropriately [7][8][9], and an upper bound for f T exceeding 3 THz was established.…”

Section: Introductionmentioning

confidence: 99%

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Optimizing performance to achieve multi‐terahertz operating frequencies in pseudomorphic HEMTs

Akis

Faralli

Goodnick

et al. 2010

Phys. Status Solidi (c)

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High‐electron mobility transistors (HEMTs) are important for high frequency applications, and they now operate in the range of several hundred GHz for the cut‐off frequency, fT and even higher for the maximum frequency of oscillation, fmax. To study the question of how much higher these frequencies can be pushed, we have used a full‐band, cellular Monte Carlo transport program to study scaled pseudomorphic HEMTs and their response at high frequency. Building on a previous study on fT, we have obtained the unilateral power gain for gate lengths ranging from 10 to 50 nm, extracted the corresponding fmax's and extrapolated the results to determine an ultimate frequency limit for the 300 nm long device shown here.. We find that fmax can exceed 4 THz, ∼25% higher than the limit for fT that was previously obtained. We also examine the effect of varying the gate to channel spacing has on the operation of these devices. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Ultra high-Speed InAlAs/InGaAs High Electron Mobility Transistor

Mohapatra

Shukla

Панда³

2014

Advances in Intelligent Systems and Computing

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This work deals with the performance evaluation and characterization of an InAlAs/InGaAs-based high electron mobility transistor with different gate lengths viz. 50, 35, and 15 nm. A maximum drain current (I dss ) of 398 mA/mm is achieved for a 15-nm-gate-length device with a V ds of 0.4 V as compared to 50-and 35-nm-gate-length HEMT with a current of 368 mA/mm and 384 mA/mm, respectively. A cutoff frequency (f T ) of 1.3 THz is reported for a 15 nm gate length, while a cutoff frequency of 625 GHz and 1.05 THz has been obtained for 50-and 35-nm-gate-length devices. The increase in cutoff frequency for a 15-nmgate-length InAlAs/InGaAs-based HEMT results due to the decrease in transit time. A maximum oscillation frequency (f max ) of 1.8 THz has been obtained for a 15-nm-gate-length device whereas a f max of 1.35 and 1.58 THz has been achieved for a 50-and 35-nm-gate-length HEMT. So, the device with ultrashort gate length performs better as compared to other two gate length devices.

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Simulation of Ultrasubmicrometer-Gate $\hbox{In}_{0.52} \hbox{Al}_{0.48}\hbox{As/In}_{0.75}\hbox{Ga}_{0.25}\hbox{As/In}_{0.52}\hbox{Al}_{0.48}\hbox{As/InP}$ Pseudomorphic HEMTs Using a Full-Band Monte Carlo Simulator

Cited by 28 publications

References 46 publications

Investigation of breakdown voltage in InAlAs/InGaAs/InP HEMTs with different structures

Investigation of breakdown voltage in InAlAs/InGaAs/InP HEMTs with different structures

Optimizing performance to achieve multi‐terahertz operating frequencies in pseudomorphic HEMTs

Ultra high-Speed InAlAs/InGaAs High Electron Mobility Transistor

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