Investigation of breakdown voltage in InAlAs/InGaAs/InP HEMTs with different structures

Abstract

InAlAs/InGaAs/InP high electron mobility transistors have higher mobility comparing to structures without indium. But existence of indium causes smaller E g and as a result smaller breakdown voltage. However, increasing percentage of indium results in higher mobility and as a result higher current and transconductance. Therefore decreasing percentage of indium causes higher breakdown voltage at the sometime lower transconductance. One of the most important parameters that limit maximum output power of transistor is breakdown voltage. In this paper, InAlAs/InGaAs/InP HEMTs with different structures are simulated and a structure with a good transconductance and breakdown voltage is introduced. Keywords: HEMT, InGaAs, breakdown voltage, channel Classification: Electronic materials, semiconductor materials References[1] T. Mimura, S. Hiyamizu, T. Fujii, and K. Nanbu, "A new field effect transistor with selectively doped GaAs/n-Al