Simulation of the film growth and film–substrate mixing during the sputter deposition process

Lugscheider, E.; Hayn, G. von

doi:10.1016/s0257-8972(99)00208-x

Cited by 12 publications

(9 citation statements)

References 10 publications

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“…32,33 This higher energy 10 -40 eV causes interruption of layer-by-layer growth and leads to interface mixing between film and substrate. 32,34,35 Since the interface mixing has some similarities to the thermal spike in bulk ion mixing, ener-arXiv:1904.08758v1 [cond-mat.mtrl-sci] 11 Apr 2019 getic deposition is considered as simplified model of sputter deposition in MD simulation. 34 For instance, it has been shown that pollution of sputtered flux with high energy atoms, as mimic of partially ionization flux, leads to amorphization of the film 36 and fully energetic deposition gives smooth amorphous film.…”

Section: Introductionmentioning

confidence: 99%

“…hard sphere or LJ, 26,27,35,38 and limited number of deposited species. 35 Thus, the previous studies were limited to only early stage of deposition, due to lack of computation power. There are also some studies on the accelerated simulation that are focused on the more realistic (slow) deposition rates.…”

Section: Introductionmentioning

confidence: 99%

“…In spite of these huge efforts, many of the above mentioned studies suffer from being performed in 2D, 23,24 using simplified force fields, e.g. hard sphere or LJ, 26,27,35,38 and limited number of deposited species. 35 Thus, the previous studies were limited to only early stage of deposition, due to lack of computation power.…”

Section: Introductionmentioning

confidence: 99%

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Role of ionization fraction on the surface roughness, density, and interface mixing of the films deposited by thermal evaporation, dc magnetron sputtering, and HiPIMS: An atomistic simulation

Kateb

Hajihoseini

Guðmundsson

et al. 2019

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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We explore the effect of ionization fraction on the epitaxial growth of Cu film on Cu (111) substrate at room temperature. We compare thermal evaporation, dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS). Three deposition conditions i.e. fully neutral, 50 % ionized and 100 % ionized flux were considered as thermal evaporation, dcMS and HiPIMS, respectively, for ∼20000 adatoms. It is shown that higher ionization fraction of the deposition flux leads to smoother surfaces by two major mechanisms i.e. decreasing clustering in the vapor phase and bi-collision of high energy ions at the film surface. The bi-collision event consists of local amorphization which fills the gaps between islands followed by crystallization due to secondary collisions. We found bi-collision events to be very important to prevent island growth to become dominant and increase the surface roughness. Regardless of the deposition method, epitaxial Cu thin films suffer from stacking fault areas (twin boundaries) in agreement with recent experimental results. In addition, HiPIMS deposition presents considerable interface mixing while it is negligible in thermal evaporation and dcMS deposition, those present less adhesion accordingly.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Role of ionization fraction on the surface roughness, density, and interface mixing of the films deposited by thermal evaporation, dc magnetron sputtering, and HiPIMS: An atomistic simulation

Kateb

Hajihoseini

Guðmundsson

et al. 2019

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…36,37 The high energy case, however, presents mixing at the film-substrate interface. 29,36,38 On the other hand there have been efforts to model ion-assisted PVD i.e. a deposition flux consisting of both neutral adatoms and ions of the noble (working) gas.…”

Section: Introductionmentioning

confidence: 99%

Effect of substrate bias on microstructure of epitaxial film grown by HiPIMS: An atomistic simulation

Kateb¹,

Guðmundsson²,

Ingvarsson³

2020

Preprint

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We explore combination of high power impulse magnetron sputtering (HiPIMS) and substrate bias for the epitaxial growth of Cu film on Cu (111) substrate by molecular dynamics simulation. A fully ionized deposition flux was used to represent the high ionization fraction in the HiPIMS process. To mimic different substrate bias, we assumed the deposition flux with a flat energy distribution in the low, moderate and high energy ranges. We also compared the results of fully ionized flux with results assuming a completely neutral flux, in analogy with thermal evaporation. It is confirmed that in the low energy regime, HiPIMS presents a slightly smoother surface and more interface mixing compared to that of thermal evaporation. In the moderate energy HiPIMS, however, an atomically smooth surface was obtained with a slight increase in the interface mixing compared to low energy HiPIMS. In the high energy regime, HiPIMS presents severe interface mixing with a smooth surface but limited growth due to resputtering from the surface. The results also indicate that fewer crystal defects appear in the film for moderate energy HiPIMS. We attribute this behavior to the repetition frequency of collision events. In particular high energy HiPIMS suffers from high repetition of collision events which does not allow reconstruction of the film. While in the low energy HiPIMS there are not enough events to overcome island growth. At moderate energy, collision events repeat in a manner that provides enough time for reconstruction which results in a smooth surface, fewer defects and limited intermixing.

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“…the porosity of the film caused by self-shadowing effects [1,2], mound formation [3], the step coverage in microelectronics [4] or the complex film structure caused by glancing angle deposition [5]. Beside its known influences, the angular distribution is an important parameter for the simulation of film growth [6,7]. In recently developed techniques such as the deposition of biaxially aligned layers [8,9], the angle of the impinging atoms is even a vital parameter.…”

Section: Introductionmentioning

confidence: 99%

Experimental determination and simulation of the angular distribution of the metal flux during magnetron sputter deposition

Horkel¹,

Aeken²,

Eisenmenger‐Sittner³

et al. 2010

J. Phys. D: Appl. Phys.

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To understand the film growth during magnetron sputter deposition a detailed knowledge of the flux of sputtered species from the target towards the substrate is vital. One important parameter is the angular distribution of the impinging neutral target atoms on the substrate, since it is responsible for e.g. self shadowing effects. The determination of the angular distribution of the metal flux at an arbitrary point in the deposition chamber is achieved by a pinhole-camera, where the information of the angular distribution is converted into a thickness profile. This paper describes the construction of such a pinhole-camera which is capable of differential pumping, the determination of the angular distribution for a wide variety of target materials, and which can easily be inserted into a deposition chamber. The angular distributions of different materials (Cu; W; Al; Ti; Mg) at different parameters (pressure, lateral position, and vertical position) are experimentally determined and compared to simulations obtained from a newly developed Monte Carlo code. It was also investigated, if Confidential: not for distribution.

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Simulation of the film growth and film–substrate mixing during the sputter deposition process

Cited by 12 publications

References 10 publications

Role of ionization fraction on the surface roughness, density, and interface mixing of the films deposited by thermal evaporation, dc magnetron sputtering, and HiPIMS: An atomistic simulation

Role of ionization fraction on the surface roughness, density, and interface mixing of the films deposited by thermal evaporation, dc magnetron sputtering, and HiPIMS: An atomistic simulation

Effect of substrate bias on microstructure of epitaxial film grown by HiPIMS: An atomistic simulation

Experimental determination and simulation of the angular distribution of the metal flux during magnetron sputter deposition

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