Abstract:We explore combination of high power impulse magnetron sputtering (HiPIMS) and substrate bias for the epitaxial growth of Cu film on Cu (111) substrate by molecular dynamics simulation. A fully ionized deposition flux was used to represent the high ionization fraction in the HiPIMS process. To mimic different substrate bias, we assumed the deposition flux with a flat energy distribution in the low, moderate and high energy ranges. We also compared the results of fully ionized flux with results assuming a compl… Show more
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