Simulation of the crystallization of thin films by rapid thermal processing

Abstract

A computer simulation has been performed of phase transformations taking place in thin films under various time-temperature regimes. The conditions used resemble those encountered in the rapid thermal processing of thin films. The effect of heating rate and final temperature have been studied in detail. It is observed that the two parameters can strongly influence the grain size and the grain size distribution within the films. The feasibility of using multiple step rapid thermal processing to optimize thin film microstructure is demonstrated.

Engineering epitaxial γ-Al2O3 gate dielectric films on 4H-SiC

“…21 It is well known that the annealing conditions have a strong impact on thin film crystallization behavior, including grain size, orientation, and extent of crystallization. [22][23][24] Here we examine the crystallinity of ␥-Al 2 O 3 films of various thicknesses using several complementary techniques. The electrical properties of Al 2 O 3 gate dielectrics in 4H-SiC MOS capacitors are also investigated.…”

Influence of the solution pH on the morphological, structural and electrical properties of Bi3.50La0.50Ti3O12 thin films obtained by the polymeric precursor method

“…The films obtained from solution with pH = 3 present a typical bismuth layer perovskite structure. As reported for films with good ferroelectric properties the grain size was around 200 nm with an elongated shape [21]. On the other hand, the films obtained from solution with pH = 9 presented spherical grains around 100 nm in size.…”

Tailoring of morphology and orientation of LaNiO3 films from polymeric precursors

“…Their morphology is completely different to those obtained by process 1: grains are oval, flat, very elongated and aligned along certain direction. Based on literature data, 9 it would be expected for process 2 to result in even broader grain size distribution than process 1. Still, grain size distribution is homogenous for all annealing periods and grain size increased with increasing annealing time, while the roughness of these films is very low (Table 1.).…”

“…Large number of the smaller grains is a result of formation of more nucleation cites, which means that the process of nucleation is more favorable than the grain growth process. The number of formed crystallization centers depends on the heating rate, 9 temperature on the substrate/film interface, temperature of the film layer but also on the temperature of the film's surface. With increase of heating rate from 1 to 20 • C/min temperature of crystallization is reached faster, which leads to the multiplication of nucleation cites and therefore of the number of the grains.…”