2007
DOI: 10.1016/j.jeurceramsoc.2007.02.052
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Tailoring of morphology and orientation of LaNiO3 films from polymeric precursors

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Cited by 5 publications
(5 citation statements)
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“…Namely, the difference in the temperature between the substrate and the film surface plays a major role in controlling the films orientation. 8 Using this approach, highly oriented LNO films, with a function of bottom electrode for further deposition of ferroelectric PZT layers and films, have been successfully obtained on a Si(1 0 0) single crystal substrate. 8,9 Note also that such growth could not be expected on the substrate used in our experiment (SiO 2 /Si), as it may be in the cases where films are grown on single crystals with a selected crystallographic orientation and lattice parameters.…”
Section: Experimental Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…Namely, the difference in the temperature between the substrate and the film surface plays a major role in controlling the films orientation. 8 Using this approach, highly oriented LNO films, with a function of bottom electrode for further deposition of ferroelectric PZT layers and films, have been successfully obtained on a Si(1 0 0) single crystal substrate. 8,9 Note also that such growth could not be expected on the substrate used in our experiment (SiO 2 /Si), as it may be in the cases where films are grown on single crystals with a selected crystallographic orientation and lattice parameters.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…Our previous investigation suggested that this method is useful for obtaining highly oriented LNO/Si(1 0 0) and PZT/Si(1 0 0) ultrathin films. 8,9 To examine the microstructure, thickness and orientation of as-synthesized PZT films grown on amorphous silica, detailed analyses were performed using Atomic Force Microscopy (AFM) and High Resolution Transmission Electron Microscopy (HRTEM), while GIXRD pattern and EDS analyses were employed to additionally confirm the film orientation and composition. The results shown in this work can be beneficial for further investigations of ultrathin PZT films.…”
Section: Introductionmentioning
confidence: 99%
“…PZT and LNO precursor solutions were prepared by the modified Pechini method. Detailed description of LNO precursor solution preparation can be found in our previous paper [12]. Starting reagents in PZT preparation were Pb(CH 3 COO) 2 •3H 2 O, Ti[OCH(CH 3 ) 2 ] 4 , ZrO 2 , HF, H 3 C 6 H 5 O 7 and HOCH 2 CH 2 OH, all of p.a.…”
Section: Methodsmentioning
confidence: 99%
“…Although Pt-covered silicon substrates are most widely used for PZT films, several problems of their application still persist. They are: possibility of Pt diffusion and reaction with film material [8], formation of hillocks [3], and enhanced fatigue after long polarization switching cycles [9,10]. Recent researches revealed that perovskite-type metallic oxides, such as LaNiO 3 (LNO), can improve fatigue in PZT thin films [9,10].…”
Section: Introductionmentioning
confidence: 99%
“…Layered LNO, crystallized in the K 2 NiF 4 -type structure, has been widely investigated in many fields because of its unique conduction process and temperature induced transition features (1)(2)(3)(4). It is well known that LNO is alternatively stacked by perovskite layer and rock salt layer with excessive oxygen ions along its c-axis, thereby showing high electron-ion mixed conductivity from 400 o C to 800 o C as introduced by Choisnet et al (5).…”
Section: Introductionmentioning
confidence: 99%