Simulation of the concentration dependence of boron diffusion in silicon

Александров, О. В.

doi:10.1134/1.1682322

Cited by 12 publications

(6 citation statements)

References 16 publications

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“…In the former model, the dependence of doping atom concentration C B ( x,t ) upon the distance from the surface x and the diffusion time t is given by the following expression [ 40 ] :

C_{B} (x, t) = \frac{N_{B}}{\sqrt{π D t}} e^{- x^{2} / 4 normalD normalt},

where N B is the amount of boron atoms in the interface sheet at x = 0 and D is the boron diffusivity. [ 40–42 ] The dopant diffusion length L D can be estimated by a simple expression [ 40 ] :

L_{D} = \sqrt{Dt} .

…”

Section: Resultsmentioning

confidence: 99%

Effect of annealing temperature on thermo‐diffusional boron doping of silicon nanowire arrays probed by Raman spectroscopy

Efimova

Lipkova

Gonchar

et al. 2020

J Raman Spectroscopy

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Arrays of silicon nanowires (SiNWs) with characteristic transverse nanowire size of the order of 100 nm were fabricated by metal‐assisted chemical etching of monocrystalline silicon wafers followed by thermo‐diffusional doping with boron and studied by means of Raman spectroscopy considering the Fano effect related to the free charge carriers (holes) in SiNWs. The hole concentration of the order of 1020 cm−3 was shown to be achieved for SiNWs annealed at 950–1000°C and the peak intensity of Raman scattering of SiNWs dropped exponentially with the increasing free‐hole concentration. The obtained results can be used for the express diagnostics of the electrical properties of silicon nanostructures for applications in optoelectronics, sensorics, and thermoelectric devices.

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“…In the former model, the dependence of doping atom concentration C B ( x,t ) upon the distance from the surface x and the diffusion time t is given by the following expression [ 40 ] :

C_{B} (x, t) = \frac{N_{B}}{\sqrt{π D t}} e^{- x^{2} / 4 normalD normalt},

where N B is the amount of boron atoms in the interface sheet at x = 0 and D is the boron diffusivity. [ 40–42 ] The dopant diffusion length L D can be estimated by a simple expression [ 40 ] :

L_{D} = \sqrt{Dt} .

…”

Section: Resultsmentioning

confidence: 99%

Effect of annealing temperature on thermo‐diffusional boron doping of silicon nanowire arrays probed by Raman spectroscopy

Efimova

Lipkova

Gonchar

et al. 2020

J Raman Spectroscopy

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show abstract

“…Therefore, the three types of distributions have been considered independently of each other. [16] for circles and [17] for squares) spatial distributions of the infused dopant.…”

Section: Discussionmentioning

confidence: 99%

“…Figure 4. Calculated (solid lines) and measured (see[16] for circles and[17] for squares) spatial distributions of the infused dopant.…”

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confidence: 99%

Redistribution of infused and implanted dopants in a multilayer structure during annealing of dopant and radiation defects for the production of a system of p–n junctions

Pankratov¹

2008

Semicond. Sci. Technol.

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“…Usually 1 ≤ γ ≤ 3 (see Refs. 26,29,and 30), and P (z, T ) is the limit of solubility. We assume, that the limit of solubility is equal to 8×10 19 cm −3 (Ref.…”

Section: Methods Of Solutionmentioning

confidence: 99%

Redistribution of Dopant During Overgrowth of a Delta-Layer

Pankratov

2009

NANO

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In this paper, we analyze redistribution of dopant in δ-doped are during overgrowth of the layer. New explanation of asymmetrization of δ-dopant distribution is presented. The explanation was based on model with some inhomogeneous parameters. The inhomogeneities of parameters are native effects of the considered technological process and inhomogeneity of the doped heterostructure. We calculated spatial distribution of Mn concentration in δ-doped area in heterostructure GaAs/InGaAs/GaAs for overlayer GaAs and estimated spreading of the δ-layer as a function of temperature of overgrowth and depth of the overlayer.Keywords: Delta-doping; modeling of dopant redistribution; alternative approach for modeling; decreasing of degradation of delta-layer. 239NANO 2009.04:239-252. Downloaded from www.worldscientific.com by NANYANG TECHNOLOGICAL UNIVERSITY on 08/21/15. For personal use only. 240 E. L. Pankratov NANO 2009.04:239-252. Downloaded from www.worldscientific.com by NANYANG TECHNOLOGICAL UNIVERSITY on 08/21/15. For personal use only. Redistribution of Dopant During Overgrowth of a Delta-Layer 241

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Simulation of the concentration dependence of boron diffusion in silicon

Cited by 12 publications

References 16 publications

Effect of annealing temperature on thermo‐diffusional boron doping of silicon nanowire arrays probed by Raman spectroscopy

Effect of annealing temperature on thermo‐diffusional boron doping of silicon nanowire arrays probed by Raman spectroscopy

Redistribution of infused and implanted dopants in a multilayer structure during annealing of dopant and radiation defects for the production of a system of p–n junctions

Redistribution of Dopant During Overgrowth of a Delta-Layer

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