Effect of annealing temperature on thermo‐diffusional boron doping of silicon nanowire arrays probed by Raman spectroscopy

Efimova, A. I.; Lipkova, E. A.; Gonchar, K. A.; Presnov, D. E.; Елисеев, А.А.; Pavlikov, A. V.; Timoshenko, V. Yu.

doi:10.1002/jrs.5956

Cited by 5 publications

(6 citation statements)

References 40 publications

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“…It is known that a one-phonon Raman spectrum in the heavily doped p-type c-Si [20] and SiNWs [21] can be described by the following Fano-like shape:…”

Section: Resultsmentioning

confidence: 99%

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Modification of Silicon Nanostructures by Cold Atmospheric Pressure Plasma Jets

Pokryshkin,

Yakunin,

Efimova

et al. 2023

Eurasian Chem. Tech. J.

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Cold atmospheric plasma (CAP) jets with helium (He) and argon (Ar) plasma-forming gases were used to modify the structure, photoluminescence (PL), and electrical properties of arrays of silicon nanowires (SiNWs) with initial cross-section sizes of the order of 100 nm and length of about 7‒8 microns. The CAP source consisted of a 30 kHz voltage generator with a full power up to 5 W and the CAP treatment for 1‒5 min resulted in spattering of SiNWs’ tips followed by redeposition of silicon atoms. An increase of the silicon oxide phase and a decrease of the PL intensity were observed in the plasma processed SiNW arrays. A decrease of the free hole concentration and an increase in the free electron density were revealed in heavily boron and phosphorous doped SiNWs, respectively, as it was monitored by means of the Raman spectroscopy, considering a coupling of the light scattering by phonon and free charge carriers (Fano effect) in SiNWs. The obtained results demonstrate that the CAP treatment can be used to change the length, sharpness, luminescence intensity, and electrical properties of silicon nanowires for possible applications in optoelectronics and sensorics.

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“…It is known that a one-phonon Raman spectrum in the heavily doped p-type c-Si [20] and SiNWs [21] can be described by the following Fano-like shape:…”

Section: Resultsmentioning

confidence: 99%

“…Free charge carriers (holes in case of p-type doping) influence the line width in the following way [21]:…”

Section: Resultsmentioning

confidence: 99%

Modification of Silicon Nanostructures by Cold Atmospheric Pressure Plasma Jets

Pokryshkin,

Yakunin,

Efimova

et al. 2023

Eurasian Chem. Tech. J.

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“…Phosphorus thermal diffusion doping can be used to control the free charge carrier concentration in SiNWs detected by Raman spectroscopy. [ 42 ] In addition, the electric field can also regulate the distribution of dopant atoms.…”

Section: Silicon Nanowire‐based Single‐molecule Biosensorsmentioning

confidence: 99%

Single‐Molecule Electronic Biosensors: Principles and Applications

Chang

Huo

Zhao

et al. 2023

Advanced Sensor Research

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Single-biomolecule electronic sensing techniques are of great importance in many fields, from medical diagnosis to disease surveillance. As the physiological changes of single biomolecules can be converted into measurable electrical signals, single-molecule electronic biosensors can realize real-time, highly sensitive, and high-bandwidth detection of individual intra-or inter-molecular interactions. These powerful single-molecule sensing devices have demonstrated key advantages in precisely providing rare and detailed intermediate information along reaction pathways and revealing unique properties hidden in ensemble measurements. This review summarizes significant advances in single-molecule electronic biosensors, emphasizing biomolecule recognition, interaction, and reaction dynamics at the single-molecule level. Sensor configurations, sensing mechanisms, and representative applications are also discussed. Furthermore, a perspective on the use of photoelectric integrated systems for synchronous sensing of the electrical and optical signals of single biomolecules is provided.

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“…where Wms is the work function difference between Al and Si, Vfb is the flatband voltage shift, q is the electronic charge, while other parameters have already been defined in Eq (1). The obtained Qeff for as-deposited and annealed at 200℃, 400℃ and 600℃ are -9.52×10 11 cm -2 , -1.72×10 12 cm -2 , and -2.57×10 11 cm -2 .…”

Section: Annealing Effects On Y2o3 Thin Films Withmentioning

confidence: 99%

“…One-dimensional (1D) semiconductor nanomaterials such as silicon nanowires (SiNWs) have received considerable attention in recent years, as these materials have unique electrical, chemical, magnetic, and optical properties, which are different from bulk material properties [1]- [4]. Research in this area is motivated by the possibility of designing semiconductor nanomaterials with applications leading to technological advances in radiation sensors, photovoltaic cell, thermoelectric, lithium-ion batteries, and areas of medical research [2], [3].…”

Section: Introductionmentioning

confidence: 99%

INVESTIGATION OF ANNEALING TEMPERATURE ON STRUCTURAL, MORPHOLOGIES AND ELECTRICAL PROPERTIES Al/Y₂O₃/SiNWs/n-Si MOS CAPACITOR

Chirwa¹,

Mutale²,

Yılmaz³

2022

RAP Conference Proceedings

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In this paper, we report the influence of post deposition annealing temperature on structural, morphological, and electrical properties of silicon nanowires (SiNWs) with Y2O3. SiNWs were fabricated by metal assisted chemical etching (MACE) method at room temperature. After the fabrication process, the high-k of Y2O3 was deposited onto SiNW/n-Si( 100) by e-beam evaporation technique. Three samples of Y2O3 with SiNWs were annealed at 200 o C, 400 o C and 600 o C in N2 ambient for 40 min, while one sample was kept as deposited, respectively. The crystalline and morphological properties of Y2O3/SiNWs/n-Si(100) were analyzed by XRD and SEM techniques. On the other hand, the electrical properties of the capacitors based on SiNWs were investigated through C-V measurements at 1MHz. We found that the capacitance value in the accumulation region, dielectric constant(k) and interface states density (Nit) decreased with an increase in the annealing temperature. This could be attributed to the formation of interfacial layer and dangling bonds during high annealing temperature.

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Effect of annealing temperature on thermo‐diffusional boron doping of silicon nanowire arrays probed by Raman spectroscopy

Cited by 5 publications

References 40 publications

Modification of Silicon Nanostructures by Cold Atmospheric Pressure Plasma Jets

Modification of Silicon Nanostructures by Cold Atmospheric Pressure Plasma Jets

Single‐Molecule Electronic Biosensors: Principles and Applications

INVESTIGATION OF ANNEALING TEMPERATURE ON STRUCTURAL, MORPHOLOGIES AND ELECTRICAL PROPERTIES Al/Y₂O₃/SiNWs/n-Si MOS CAPACITOR

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Effect of annealing temperature on thermo‐diffusional boron doping of silicon nanowire arrays probed by Raman spectroscopy

Cited by 5 publications

References 40 publications

Modification of Silicon Nanostructures by Cold Atmospheric Pressure Plasma Jets

Modification of Silicon Nanostructures by Cold Atmospheric Pressure Plasma Jets

Single‐Molecule Electronic Biosensors: Principles and Applications

INVESTIGATION OF ANNEALING TEMPERATURE ON STRUCTURAL, MORPHOLOGIES AND ELECTRICAL PROPERTIES Al/Y2O3/SiNWs/n-Si MOS CAPACITOR

Contact Info

Product

Resources

About

INVESTIGATION OF ANNEALING TEMPERATURE ON STRUCTURAL, MORPHOLOGIES AND ELECTRICAL PROPERTIES Al/Y₂O₃/SiNWs/n-Si MOS CAPACITOR