Simulation of Silicon Photomultiplier Signals

Seifert, Stefan; Dam, Herman T. van; Huizenga, J.; Vinke, Ruud; Dendooven, P.; Löhner, H.; Schaart, Dennis R.

doi:10.1109/tns.2009.2030728

Cited by 110 publications

(98 citation statements)

References 14 publications

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“…To better describe the signal transmission process in SiPM, the equivalent circuit diagram of EQR SiPM is given in Figure 6, which is based on the equivalent circuit of SiPM in the literature [22] and combining it with the peculiar structure of EQR SiPM showed in Figure 1. The diode section consists of the P/N junction (P++ layer and N-enrich region), R q is the quenching resistance, which consists of epitaxial resistor, R g is the resistance produced by the P++ layer and C g is the capacitance produced by the Gap region.…”

Section: Resultsmentioning

confidence: 99%

Recovery Time of Silicon Photomultiplier with Epitaxial Quenching Resistors

et al. 2017

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Abstract:The silicon photomultiplier (SiPM) is a promising semiconductor device for low-level light detection. The recovery time, or the photon-counting rate of the SiPM is essential for high-flux photon detection in such applications as photon counting computer tomography (CT). A SiPM with epitaxial quenching resistors (EQR SiPM) has advantages in fabricating small APD microcells connected in series with lower quenching resistors, therefore, APD cells with a low RC time constant and a short recovery time can be expected. In this report, the recovery time of EQR SiPM has been investigated using both the double light pulse method and the waveform analysis method. The results show that the recovery time of EQR SiPM is strongly dependent on the size of the active area and the number of fired pixels. For a 3 × 3 mm 2 device, while total about 90,000 pixels were fired, the recovery time was 31.1 ± 1.8 ns; while fired pixels were controlled to about 2000, the recovery time decreased significantly to 6.5 ± 0.4 ns; and the recovery time of one fired pixel was 3.1 ± 0.2 ns. For 1.4 × 1.4 mm 2 device, the recovery time was 15.2 ± 0.5 ns, while a total of about 20,000 pixels were fired. Effects that may affect the recovery time of the SiPM, including strength of the pulse light, signal transmission time delay, and the readout electronics are discussed.

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Section: Resultsmentioning

confidence: 99%

Recovery Time of Silicon Photomultiplier with Epitaxial Quenching Resistors

et al. 2017

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“…It is noted that, in addition to SiPM saturation, the pulse height spectra may in principle also be influenced by electronic non-proportionality as described by Seifert et al (2008Seifert et al ( , 2009. However, this effect is expected to be small in our measurements.…”

Section: Sipm Saturationmentioning

confidence: 88%

LaBr₃:Ce and SiPMs for time-of-flight PET: achieving 100 ps coincidence resolving time

et al. 2010

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The use of time-of-flight (TOF) information in positron emission tomography (PET) enables significant improvement in image noise properties and, therefore, lesion detection. Silicon photomultipliers (SiPMs) are solid-state photosensors that have several advantages over photomultiplier tubes (PMTs). SiPMs are small, essentially transparent to 511 keV gamma rays and insensitive to magnetic fields. This enables novel detector designs aimed at e.g. compactness, high resolution, depth-of-interaction (DOI) correction and MRI compatibility. The goal of the present work is to study the timing performance of SiPMs in combination with LaBr 3 :Ce(5%), a relatively new scintillator with promising characteristics for TOF-PET. Measurements were performed with two, bare, 3 mm × 3 mm × 5 mm LaBr 3 :Ce(5%) crystals, each coupled to a 3 mm × 3 mm SiPM. Using a 22 Na point source placed at various positions in between the two detectors, a coincidence resolving time (CRT) of ∼100 ps FWHM for 511 keV annihilation photon pairs was achieved, corresponding to a TOF positioning resolution of ∼15 mm FWHM. At the same time, pulse height spectra with well-resolved full-energy peaks were obtained. To our knowledge this is the best CRT reported for SiPM-based scintillation detectors to date. It is concluded that SiPM-based scintillation detectors can provide timing resolutions at least as good as detectors based on PMTs.

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“…SiPMs typically comprise between and parallelconnected GM-APDs, each reverse-biased at a voltage and quenched by a resistor [28], [29]. The SiPM output current can be converted into a voltage using a shunt resistor and 0018-9499/$26.00 © 2010 IEEE amplified with a (high input impedance) voltage preamplifier as indicated in Fig.…”

Section: Silicon Photomultipliersmentioning

confidence: 99%

“…It should be noted that, for fast pulses, the SiPM gain may show another type of electronic nonproportionality, which is typically in the order of a few percent and finds its origin in the variation of the time needed to quench the discharge as a function of the number of coincidently fired cells [29].…”

Section: A Sipm Gain and Gain Nonproportionalitymentioning

confidence: 99%

“…It is noted that the normalized single microcell signal shape at the output of the SiPM might in fact differ somewhat from , as it is shaped due to the various capacitances and inductances, which might not be lossless, in the SiPM [29], [30]. However, assuming that microcells do not influence each other, the total integrated signal of all cells at the output of the SiPM, , expressed in terms of the equivalent number of fired cells, simply equals the sum of all .…”

Section: ) Time Profile Of a Scintillation Light Pulsementioning

confidence: 99%

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A Comprehensive Model of the Response of Silicon Photomultipliers

Dam

Seifert

Vinke

et al. 2010

IEEE Trans. Nucl. Sci.

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104

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Abstract-The response of a silicon photomultiplier (SiPM) to optical signals is inherently nonproportional due to saturation, afterpulsing, and crosstalk. Existing models of the SiPM response do not account for all of these effects, and therefore, these models are not sufficiently accurate for many applications. In this work, a comprehensive model of the SiPM response is developed that is generally applicable to exponentially decaying light pulses and that can be simplified in the case of very short (e.g., laser) light pulses. The model accounts for the total number and the temporal distribution of the incident photons as well as for the relevant SiPM parameters, viz. the recovery time, afterpulsing, crosstalk, and their cross correlations. The model is shown to correspond well with measurements on a SiPM-based scintillation detector. Furthermore, it is shown to be in agreement with several cases for which the SiPM response is known a priori. Having thus validated the model, its use is demonstrated by predicting the response of the Hamamatsu multipixel photon counter (MPPC) S10362-33-050C SiPM to several different scintillators.

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Simulation of Silicon Photomultiplier Signals

Cited by 110 publications

References 14 publications

Recovery Time of Silicon Photomultiplier with Epitaxial Quenching Resistors

Recovery Time of Silicon Photomultiplier with Epitaxial Quenching Resistors

LaBr₃:Ce and SiPMs for time-of-flight PET: achieving 100 ps coincidence resolving time

A Comprehensive Model of the Response of Silicon Photomultipliers

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Simulation of Silicon Photomultiplier Signals

Cited by 110 publications

References 14 publications

Recovery Time of Silicon Photomultiplier with Epitaxial Quenching Resistors

Recovery Time of Silicon Photomultiplier with Epitaxial Quenching Resistors

LaBr3:Ce and SiPMs for time-of-flight PET: achieving 100 ps coincidence resolving time

A Comprehensive Model of the Response of Silicon Photomultipliers

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LaBr₃:Ce and SiPMs for time-of-flight PET: achieving 100 ps coincidence resolving time