Simulation of self-heating effects in 30nm gate length FinFET

Abstract

This paper presents a detailed thermal analysis of nanoscale FinFET devices. A three-dimensional electro-thermal device simulator, calibrated against Monte Carlo simulations at various temperatures, is adopted in order to study self-heating effects in FinFETs, and their dependence on geometrical parameters such as buried oxide thickness, source/drain extension length, fin-pitch and fin height.

Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession

“…The isolated thin or thick BOX SOI FinFETs, in addition, suffer however from being on their substrate without direct contact to the silicon, which can result in self heating and Floating Body Effect (FBE) [15]. This primarily impacts the on-state current of the devices but little degradation was demonstrated by simulation for varying fin length and pitch [16].…”

Nonequilibrium Green function simulation of coupled electron–phonon transport in one-dimensional nanostructures

“…[8][9][10][11][12][13][14] The phonon transport is also crucial 15,16) because the threedimensional transistors are filled with heat due to the channel surrounded by the low-thermal conductance materials. 12,17) The simulation of the self-heating effects in nanoscale transistors and thermoelectric devices should be performed with considering the electron-phonon coupling. In order to simulate the self-heating effects, the electron and the phonon transport equations need to be solved self-consistently via the heat generation from the electron system and the lattice temperature distribution of the phonon system.…”

Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs

“…This is complemented by lower statistical variability due to a tolerance of lower channel doping compared to bulk transistors. Self-heating has been highlighted as one of the areas of concern for FinFETs because of the 3D geometry, the impact of the corresponding 3D heat flow through the fin to the substrate and the impact of the fin geometry on the local thermal conductivity [2][3][4][5][6][7][8]. These perceived self-heating problems could be exacerbated in This Manuscript received December 10, 2014; revised April 21, 2015.…”

“…Therefore analyzing and modeling the self-heating in FinFETs and the influence on device performance has become one of the topics attracting a lot of recent interest [2][3][4][5][6][7][8].…”