Simulation of phosphorene Schottky-barrier transistors

Wan, Runlai; Cao, X. A.; Guo, Jing

doi:10.1063/1.4900410

Cited by 31 publications

(27 citation statements)

References 22 publications

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“…For examples, several studies utilized tight binding (TB) parameters of phosphorene202627. Other researchers used computation theories such as the k · p d and effective mass methods1028. However, in these methods, the key parameters are obtained from large area phosphorene, without considering the edge effect of PNR.…”

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confidence: 99%

Scaling Effect of Phosphorene Nanoribbon - Uncovering the Origin of Asymmetric Current Transport

Chang

Huang

et al. 2016

Sci Rep

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In this paper, phosphorene nanoribbons (PNRs) are theoretically studied using a multiscale simulation flow from the ab initio level to the tight binding (TB) level. The scaling effects of both armchair PNRs (aPNRs) and zigzag PNRs (zPNRs) from material properties to device properties are explored. The much larger effective mass of holes compared to that of electrons in zPNR is responsible for its asymmetric transport. However, in aPNR, not only the effective mass difference but also the non-equal density of state (DOS) distributions near valence band maximum (VBM) and conduction band minimum (CBM) lead to the asymmetric transport. This non-equal distribution phenomenon is caused by energy band degeneracies near the VBM. Based on these two different mechanisms, PNRs’ asymmetric transport characteristics at the device level are explained, and it is shown that this behaviour can be ameliorated well by reducing the ribbon width in an aPNR MOSFET. Calculation results also indicate that aPNR’s effective mass is comparable to that of a graphene nanoribbon (GNR) at the same bandgap; however, aPNR’s band gap variation is more stable and regular than that of GNR, making it a good candidate for use in low-dimensional nano devices.

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confidence: 99%

Scaling Effect of Phosphorene Nanoribbon - Uncovering the Origin of Asymmetric Current Transport

Chang

Huang

et al. 2016

Sci Rep

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“…Theoretical investigations of phosphorene transistors have also been performed [7], [8]. Lam et al [7] assessed the performance limits of ballistic phosphorene FETs with a semiclassical model, which indicates that highly anisotropic band structure of phosphorene is advantageous and promises considerable ballistic transistor performance improvements over TMDs.…”

Section: Introductionmentioning

confidence: 99%

“…Lam et al [7] assessed the performance limits of ballistic phosphorene FETs with a semiclassical model, which indicates that highly anisotropic band structure of phosphorene is advantageous and promises considerable ballistic transistor performance improvements over TMDs. The performance of Schottky barrier (SB) phosphorene FET was studied in [8].…”

Section: Introductionmentioning

confidence: 99%

Simulation of Phosphorene Field-Effect Transistor at the Scaling Limit

Cao

Guo

2015

IEEE Trans. Electron Devices

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The ultimate scaling limit and device physics of aggressively scaled phosphorene MOSFETs are examined by self-consistent multiscale quantum transport simulations. The MOSFET structure can effectively suppress the ambipolar conduction and decrease the leakage current, and thereby, is more scalable than the Schottky barrier FET structure. The interplay of quantum mechanical effects and highly anisotropic band structure plays a critical role for phosphorene transistors with a sub 10-nm channel length, in which the optimum choice of the transport crystalline direction is completely different from phosphorene FETs with a longer channel length. Even at a sub-10-nm channel length with considerable quantum tunneling effects, the anisotropic band structure still provides a better device performance in terms of ON-current over other 2-D semiconductors with nearly isotropic band structures, such as MoS 2 . With the optimum choice of the transport direction, both n-and p-type phosphorene FETs meet the International Technology Roadmap for Semiconductor (ITRS) target at the 5-nm technology node.

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“…On the other hand, performance limits of phosphorene FETs have been projected through numerical device simulations [4]- [6]. However, most theoretical studies have focused on monolayer phosphorene FETs, and little is known about few-layer phosphorene devices [7]. In particular, the role of multiple layers in the device performance is vague due to the trade-off of the channel thickness: Multiple layers may deliver a higher current than a monolayer because of larger density of states, but at the same time, the thicker channel has a disadvantage in electrostatic control by the gate.…”

Section: Introductionmentioning

confidence: 99%

Scaling Limit of Bilayer Phosphorene FETs

Yin

Han

Yoon

2015

IEEE Electron Device Lett.

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We investigate bilayer phosphorene field-effect transistors (FETs) by self-consistent atomistic quantum transport simulations. Despite a penalty in electrostatic control for multiple layers, 10-nm-channel bilayer phosphorene FETs can exhibit excellent device characteristics, such as I on > 3 mA/µm, large current ratio (>10 7 ), and small subthreshold swing (SS) of 66 mV/dec, with a double-gate device structure. While the scaling of gate dielectric monotonically enhances the overall performance of this device, channel length can only be scaled down to ∼8 nm due to significant short-channel effects. We benchmark bilayer phosphorene FETs against bilayer MoS 2 and WSe 2 FETs along with a monolayer phosphorene device, which reveals that bilayer phosphorene FETs have favorable switching characteristics over other similar 2-D bilayer semiconductor devices, making both monolayer and bilayer phosphorene attractive for future switching applications. Our simulation results not only provide the performance and scaling limit of bilayer phosphorene FETs but also create irreplaceable insights into proper device design and parameter optimizations.Index Terms-Bilayer Phosphorene, Field-Effect Transistor, quantum transport, non-equilibrium Green's function.

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Simulation of phosphorene Schottky-barrier transistors

Cited by 31 publications

References 22 publications

Scaling Effect of Phosphorene Nanoribbon - Uncovering the Origin of Asymmetric Current Transport

Scaling Effect of Phosphorene Nanoribbon - Uncovering the Origin of Asymmetric Current Transport

Simulation of Phosphorene Field-Effect Transistor at the Scaling Limit

Scaling Limit of Bilayer Phosphorene FETs

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