Simulation of nanometer-scale semiconductor devices considering quantum effects

Abstract

It is necessary to take quantum effects into account in the design of nanometerscale high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). To achieve this, an effective potential method is applied to drift-diffusion (DD)-based simulations of the threshold-voltage characteristics of nanometer-scale InP-based HEMTs and to ensemble Monte Carlo (EMC) simulations of transit times in InP-based HBTs. The simulated results are compared with the experimental results in order to validate the method. We conclude that device simulations incorporating the effective potential method are very useful for designing millimeter-wave HEMTs and HBTs.

A fully 2-dimensional, quantum mechanical calculation of short-channel and drain induced barrier lowering effects in HEMTs

“…1 for the values of device parameters shown. The specific device has also been examined by Sano [19]. Although the set of device equations we used are valid for any biasing conditions we give at first the results for the equilibrium case of V DS = 0.…”

“…This calculation was entirely classical. Sano [19] has recently calculated this effect in InAlAs/InGaAs HEMTs on InP substrate including quantum effects while DIBL effects have been calculated by Gupta et al [20] using an analytical model for InP HEMTs.…”

“…Our calculations are general and can be applied to any HEMT structure. We focused mainly on the devices reported in Sano [19]. The only reason for this is that a complete set of experimental results is available for these devices.…”

“…However Sano [19] has used the 3D DOS in his calculations, while Gupta et al [20] has used an approximate set of initial equations to accomplish an analytical solution. It is the purpose of this paper to investigate such effects by a fully 2D self-consistent solution of the Poisson, Schrö -dinger and continuity equations using the 1D DOS and correlate with existing experimental data of HEMTs with nanometric gate lengths.…”

Quantum Modeling of Nanoscale Symmetric Double-Gate InAlAs/InGaAs/InP HEMT

“…Nanodimensions led to an increased interest in modeling and predicting device performance prior to fabrication. Hence simulation of these devices including quantum effects was taken up for SGHEMT (single-gate HEMT) [14,15]. To trace how the dominant trends of quantum effects are impacting DGHEMT, new challenges are directed on the device simulator to identify the limiting and critical parameters for improved performance.…”