A fully 2-dimensional, quantum mechanical calculation of short-channel and drain induced barrier lowering effects in HEMTs

Krokidis, G.; Xanthakis, J. P.; Uzunoglu, N.K.

doi:10.1016/j.sse.2007.10.021

Cited by 13 publications

(11 citation statements)

References 23 publications

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“…These are shown in figure 1. Our method follows our previous work on HEMTs [21]. This method is based on solving the fundamental equations of semiconductor physics and -as already stated-was originally applied extensively to Si-MOSFETs [18][19] but has not as yet been In solving the Schrödinger and Poisson equations we must note that the charge density inside the quantum well is obtained (at each stage of the iteration) by dividing the energy spectrum of the Schrödinger equation into two parts: a) below the top of the barrier Etop, it is obtained quantum mechanically by: is valid for a system with a single layer (being the channel) to which voltages VS and VD are applied at its two ends.…”

Section: Methodsmentioning

confidence: 99%

“…The method is a wellestablished one. It was originally applied successfully to Si MOSFETS [18][19] and then -accordingly modified-to HEMTS [20][21] and to simple surface channel QW-FETs [22]. It is presented in detail in the next section but an initial justification for its use in nanoscale QW-FETs (as opposed to long-gate ones) is given immediately below.…”

Section: Introductionmentioning

confidence: 99%

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Poisson-Schroedinger-Continuity two-dimensional analysis of both short (ballistic) and long (drift-diffusion) III–V FETs

Gili¹,

Sarras²,

Xanthakis³

2016

Microelectronic Engineering

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It was recently shown that the quantum mechanical results of the Landauer theory of conduction, applied to a simple one-layer channel FET, can be recast in the traditional drift-diffusion form but with the mobility and injection velocity redefined in a new context. Based on that, we have performed two-dimensional Poisson-Schrödinger-Continuity calculations for both long drift-diffusion and short ballistic quantum well FETs. Very good agreement with many-layer, state-of-the-art InGaAs devices has been achieved provided that only one parameter, the saturation velocity υsat of the mobility function, is rescaled so that our calculated drain current agrees with the experimental value at very large gate voltages VG. This single value of υsat has been used at all other VG. Our calculations are not only a test of the equivalence described above but valuable information about the sub-threshold regime and especially the leakage currents is obtained. This information is usually absent in rigorous Landauertype-or equivalently non-equilibrium Green functions-calculations which are performed in simplified FET systems.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Poisson-Schroedinger-Continuity two-dimensional analysis of both short (ballistic) and long (drift-diffusion) III–V FETs

Gili¹,

Sarras²,

Xanthakis³

2016

Microelectronic Engineering

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“…However, there are few reports on the principle of 2DEG formation. Due to the formation principle of 2DEG, the quantum size effect (quantum confinement effect) has been reported [11], [12]. This is a phenomenon that occurs when the carriers are confined in a widened region spanning the de Broglie wave.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Two-Dimensional Electron Gas Formation in InGaAs-Based HEMTs

Takagi¹,

Kato²,

Taguchi³

2020

Adv. sci. technol. eng. syst. j.

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In this study, a theoretical simulation was performed using the Schrodinger-Poisson method to elucidate the formation factors for two-dimensional electron gas in InGaAsbased HEMTs. No visible change was observed in the carrier density and the potential shape. The inflection point of the energy level and the agreement of the energy level in each dimension were confirmed for the change in the number of carriers in the channel layer. It was found that the number of electrons at this coincidence point almost coincided with the number of electrons in the IV characteristics measured by the previous research for each gate voltage. The change in carrier state suggested that a 2DEG was formed. In addition, by considering the transport of carriers on the crystal lattice plane as a cause of the inflection point of the energy level, it was suggested that it might be caused due to the occurrence of the degeneracy process at a certain moment. From these results, it was experimentally and theoretically shown that the formation of 2DEG was caused by the carrier degeneration and the state change.

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“…Nanodimensions led to an increased interest in modeling and predicting device performance prior to fabrication. Hence simulation of these devices including quantum effects was taken up for SGHEMT (single-gate HEMT) [14,15]. To trace how the dominant trends of quantum effects are impacting DGHEMT, new challenges are directed on the device simulator to identify the limiting and critical parameters for improved performance.…”

Section: Introductionmentioning

confidence: 99%

Quantum Modeling of Nanoscale Symmetric Double-Gate InAlAs/InGaAs/InP HEMT

Verma¹,

Gupta²,

Gupta³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-The aim of this work is to investigate and study the quantum effects in the modeling of nanoscale symmetric double-gate InAlAs/InGaAs/InP HEMT (High Electron Mobility Transistor). In order to do so, the carrier concentration in InGaAs channel at gate lengths (L g ) 100 nm and 50 nm, are modelled by a density gradient model or quantum moments model. The simulated results obtained from the quantum moments model are compared with the available experimental results to show the accuracy and also with a semi-classical model to show the need for quantum modeling. Quantum modeling shows major variation in electron concentration profiles and affects the device characteristics. The two triangular quantum wells predicted by the semi-classical model seem to vanish in the quantum model as bulk inversion takes place. The quantum effects thus become essential to incorporate in nanoscale heterostructure device modeling.

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A fully 2-dimensional, quantum mechanical calculation of short-channel and drain induced barrier lowering effects in HEMTs

Cited by 13 publications

References 23 publications

Poisson-Schroedinger-Continuity two-dimensional analysis of both short (ballistic) and long (drift-diffusion) III–V FETs

Poisson-Schroedinger-Continuity two-dimensional analysis of both short (ballistic) and long (drift-diffusion) III–V FETs

Analysis of Two-Dimensional Electron Gas Formation in InGaAs-Based HEMTs

Quantum Modeling of Nanoscale Symmetric Double-Gate InAlAs/InGaAs/InP HEMT

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