Analysis of Two-Dimensional Electron Gas Formation in InGaAs-Based HEMTs

Takagi, Itsuki; Kato, Takuma; Taguchi, Hayao

doi:10.25046/aj050275

Cited by 3 publications

(4 citation statements)

References 24 publications

(25 reference statements)

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“…In pursuit of this goal, we adopted a judicious approach known as the Hydrodynamic model. This model offers a balanced compromise between the drift-diffusion model, known for its simplifications, and the computationally intensive Monte Carlo method, which demands substantial computational resources [20,21].…”

Section: Research Proceduresmentioning

confidence: 99%

Optimizing Terahertz Signal Detection in High Electron Mobility Transistors: Insights from Plasma Resonance Studies

Mahi,

Arbaoui,

Tadjeddine

et al. 2024

J. Nano- Electron. Phys.

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This analytical modeling study delves into the resonance behavior of plasma waves within the channel of High Electron Mobility Transistors (HEMTs) when subjected to Terahertz (THz) excitation. The core objective is to systematically examine the influence of various HEMT parameters on the dynamics of plasma resonance and the detection of THz signals. A noteworthy finding emerges: the most effective detection of THz signals materializes when both the gate and drain terminals simultaneously receive the THz excitation. Moreover, the modulation of biasing conditions, specifically represented by polarization voltages, exerts a substantial influence on plasma resonance frequencies, offering a promising avenue for tailoring HEMT responses. Further exploration reveals the substantial impact of access region characteristics, including length and doping concentration, on the excitation of 3D plasma waves within the HEMT, with the drain access region demonstrating particular significance. Additionally, we delve into the ramifications of gate geometry, encompassing width and channel-to-gate distance, revealing their capacity to significantly alter 2D plasma resonance frequencies. In extreme cases, the HEMT exhibits behavior akin to a simplified diode configuration, resulting in the absence of 2D plasma resonance. In summation, this research unfolds essential insights for the design and optimization of HEMT-based devices tailored to specific THz frequency applications. It underscores the pivotal roles of biasing conditions, access region properties, and gate geometries in shaping HEMT performance and THz signal detection.

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Section: Research Proceduresmentioning

confidence: 99%

Optimizing Terahertz Signal Detection in High Electron Mobility Transistors: Insights from Plasma Resonance Studies

Mahi,

Arbaoui,

Tadjeddine

et al. 2024

J. Nano- Electron. Phys.

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“…Now by considering electric field in the potential well with two sub-band energy levels (E 0 and E 1 ), Equation ( 5) can be written as. [13][14][15]…”

Section: Hemt Structure and Its Physicsmentioning

confidence: 99%

“…

n_{s_{i}} = \frac{m^{*} κ_{B} T}{π ℏ^{2}} ([], \ln ((), e^{((), E_{F} - E_{i}) / κ_{B} T} + 1))

where k B and T are the Boltzmann constant and the electron temperature respectively and other symbols represent usual meaning. Now by considering electric field in the potential well with two sub‐band energy levels ( E 0 and E 1 ), Equation (5) can be written as 13–15

n_{s} = {DV}_{th} ([], \ln ((), e^{(E_{F} - E_{0})} / V_{th} + 1) + \ln ((), e^{(E_{F} - E_{1})} / V_{th} + 1))

where D is the density of states and V th is the thermal voltage as given by kT/q, E F is the Fermi energy level.…”

Section: Hemt Structure and Its Physicsmentioning

confidence: 99%

2DEG characteristics of InAlAs/InP based HEMTs by solving Schrödinger and Poisson equations followed by device characteristics

Lenka

Singh

Tripathy

et al. 2021

Int J Numerical Modelling

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In this paper the 2DEG characteristics study of InAlAs/InP based high electron mobility transistor (HEMT) structures with two different channel materials (InAlAs and InGaAs) are presented through self‐consistent solutions of Schrodinger and Poisson equations which results in energy bands, sheet charge density, electric field, sheet resistance and CV charactristics. The 2DEG (two dimensional electron gas) is created at the heterointerface of InAlAs/In(Al,Ga)As due to conduction energy band discontinuity. The 2DEG is realised by the presence of subbands at the quantum well. The subbands represent the wave function of electrons. The innovation of this work is that InAlAs and InGaAs with x = 0.75 composition can be best utilised as channel material due to low bandgaps 0.821 and 0.639 eV respectively towards improved 2DEG density, subbands, channel sheet resistance, electric field in the 2DEG and CV characteristics. The DC characteristics comprised of Id ~ Vg, Id ~ Vd, transconductance, cut‐off frequency, maximum frequency of oscillation are extracted through TCAD simulations followed by experimental validation. The InGaAs/InP based HEMT can be a potential candidate for ultra‐high‐speed microwave and millimetre wave applications.

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“…An example is found in the solution of a cylindrical nanowire shown in [2]. Other examples of nanometersize structures made of compound materials are illustrated in [4]; a recent analysis of the Schrödinger-Poisson system of equations in InGaAs-based HEMTs is shown in [5].…”

Section: Introductionmentioning

confidence: 99%