Simulation of MOSFET lifetime under AC hot-electron stress

Kuo, Ming-Chang; Seki, Kazuhiko; Lee, P.M.; Choi, Jun Woo; Ko, P.K.; Hu, Chenming

doi:10.1109/16.3358

Cited by 81 publications

(10 citation statements)

References 10 publications

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“…This is also evidenced by the frequency-independence of hot-carrier reliability up to RF frequencies, as recently reported in [14], as well as by the conclusions of [15].…”

Section: Rf Experimentssupporting

confidence: 66%

Reliability Simulation Models for Hot Carrier Degradation

Scholten

Vries

Bisschop

et al. 2014

Hot Carrier Degradation in Semiconductor Devices

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Because reliability considerations are gradually shifting from device to circuit level (Groeseneken et al., Trends and perspectives for electrical characterization and reliability assessment in advanced CMOS technologies, Proceedings of the ESSDERC, 2010, pp. 64-72), circuit reliability simulation is becoming increasingly important. To enable reliability simulation, reliability simulation models are a prerequisite. These simulation models are often based on analytical descriptions taken from the literature. Apart from the desire to make these models fit experimental data accurately, one encounters some specific practical problems when building them. These problems include (1) the translation from equations derived for DC stress conditions to equations valid under more general transient stress conditions, (2) the translation of the degradation of observables to the degradation of compact model parameters, and (3) the need to keep the simulation overhead of these models to the bare minimum. These issues will be addressed in this chapter, and illustrated using the examples of (1) reverse-V BE degradation in HBTs, (2) hot-carrier degradation in MOSFETs, and (3) hot-carrier degradation in LDMOS devices.

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“…This is also evidenced by the frequency-independence of hot-carrier reliability up to RF frequencies, as recently reported in [14], as well as by the conclusions of [15].…”

Section: Rf Experimentssupporting

confidence: 66%

Reliability Simulation Models for Hot Carrier Degradation

Scholten

Vries

Bisschop

et al. 2014

Hot Carrier Degradation in Semiconductor Devices

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“…However, the DC stress does not represent the real operation condition in some applications, such as mixers, local oscillators. The enhanced dynamic stressinduced degradation is observed in the tens MHz [6]. The damage of dynamic stress drops significantly at very high frequency.…”

Section: Introductionmentioning

confidence: 88%

Dynamic stress-induced high-frequency noise degradations in nMOSFETs

Yuan

Sadat

2005

Microelectronics Reliability

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“…The conventional approach of determining hot carrier degradation under AC stress conditions is to make use of an expression for the time dependency function describing device degradation, empirically verified for the DC case and using a quasi-static approximation [6] to determine the degradation rate under AC stress conditions. The assumption made in this approximation is that the device degradation rate -the time derivative of the device degradation -for all stress times can be derived from the DC time dependency function.…”

Section: Quasi-static Ac Degradation Modelingmentioning

confidence: 99%

“…The main justification of this approach is, however, purely empirical [6] and only verified if the DC device degradation can be written as a power law function of time. From literature it is known that this power law may not always be applicable [7][8][9][10], and other time dependency functions for the device degradation are more appropriate.…”

Section: Introductionmentioning

confidence: 99%

The hot carrier degradation rate under AC stress

Sasse

Bisschop

2010

2010 IEEE International Reliability Physics Symposium

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In this work the methodology used for predicting hot carrier device degradation under AC stressing conditions is critically re-examined. Having an accurate method is a key prerequisite of developing useful tools for the reliability simulation of any circuit. It will be shown that existing methods are not generally applicable. A new, better applicable method is presented and verified with experimental data.

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Simulation of MOSFET lifetime under AC hot-electron stress

Cited by 81 publications

References 10 publications

Reliability Simulation Models for Hot Carrier Degradation

Reliability Simulation Models for Hot Carrier Degradation

Dynamic stress-induced high-frequency noise degradations in nMOSFETs

The hot carrier degradation rate under AC stress

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