Simulation of Laterally Coupled InGaZnO₄-Based Electric-Double-Layer Transistors for Synaptic Electronics

Abstract

Artificial synapse is the key element for neuromorphic systems. Recently, synaptic transistors have been proposed and investigated, but physical understanding of such synaptic devices based on ion/electron electrostatic coupling effect remains unknown. Here, laterally coupled InGaZnO 4 electric-double-layer synaptic transistors were numerically simulated. An ion drift-diffusion model is employed to describe the laterally capacitive coupling of the proton conducting electrolyte. Important synaptic behaviors, such as excitatory postsynaptic current and paired-pulse facilitation, are mimicked by the transient solution. InGaZnO 4 synaptic device exhibits an extremely low-power consumption of ∼0.2 pJ/spike. Our simulation results are interesting for energy-efficient synaptic electronics and neuromorphic systems. IndexTerms-Laterally-coupled synaptic transistors, electric-double-layer, ion drift-diffusion model.

Neuromorphic Functions in PEDOT:PSS Organic Electrochemical Transistors

“…It is noteworthy that in most cases of electrolyte -gated synaptic transistors, facilitation of I Post is observed. [ 17,22,38,39 ] Facilitative functions can be equally reproduced in OECTs, by applying negative presynaptic gate pulses and thereby increasing channel conductance by inducing electrochemical doping above the native level of the channel. [ 9 ] Facilitation is also expected to arise in accumulation mode OECTs, in which the transistor is in the OFF state at zero gate voltage.…”

Photoelectric IGZO Electric-Double-Layer Transparent Artificial Synapses for Emotional State Simulation

“…Presynaptic spikes are applied on the gate and postsynaptic currents are recorded from the drain. The channel conductance is regarded as the synaptic weight . Apart from electric signals, optical stimuli generated by the external environment can also affect neurons, the optical stimuli were applied on the IGZO channel layer, the output potential, and the conductance of the channel are regarded as input, postsynaptic potential, and synaptic weight, respectively .…”

Electrolyte-gated transistors for synaptic electronics, neuromorphic computing, and adaptable biointerfacing

“…For example, the PPF value decreased much slower with a larger gateto-channel distance due to the fact that longer diffusion time was needed for the protons to relax back to the balanced state in the case Applied Physics Reviews REVIEW scitation.org/journal/are of a larger migration distance. 173 Due to the lateral coupling property, the freestanding solid-state electrolyte has been proven suitable for coplanar-gated transistors to emulate temporal summation functions. 165 As can be seen in Fig.…”