Simulation of In_0.65Ga_0.35N single-junction solar cell

Abstract

The performances of In0.65Ga0.35N single-junction solar cells with different structures, including various doping densities and thicknesses of each layer, have been simulated. It is found that the optimum efficiency of a In0.65Ga0.35N solar cell is 20.284% with 5 × 1017 cm−3 carrier concentration of the front and basic regions, a 130 nm thick p-layer and a 270 nm thick n-layer.

Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells

“…Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells Carl J. Neufeld, 1,a) Samantha C. Cruz, 2 Robert M. Farrell, 2 Michael Iza, 2 Stacia Keller, 1 Shuji Nakamura, 2 Steven P. DenBaars, 1,2 James S. Speck, 2 We report on the unique thermal properties of In 0.28 Ga 0.72 N/GaN multiple quantum well solar cells. The devices exhibited an external quantum efficiency of 69% (26%) at 390 nm (460 nm), an open circuit voltage of 2.04 V, a fill factor of 63%, a short circuit current density of 2 mA/cm 2 , and a peak output power of 2.63 mW/cm 2 at room temperature under 1-sun AM1.5G illumination.…”

“…The III-nitride materials system has many properties which make it an excellent candidate for high efficiency photovoltaic devices. [1][2][3][4] For instance, the band gap of the InGaN materials system spans nearly the entire solar spectrum (0.7 eV-3.4 eV), [5][6][7][8] creating the potential for making multijunction solar cells with a single ternary alloy system. Moreover, the absence of other mature materials with a direct band gap greater than $2.2 eV means that III-nitride materials hold great potential for use as the high energy cell in a multijunction solar cell.…”

Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy

“…1,2 With its wide band gap energy variation, ternary GaInN has received considerable attention as an excellent candidate for high-efficiency photovoltaic devices. [3][4][5][6][7] GaInN has been shown to have superior high energy radiation resistance for space-based photovoltaic applications. 8 It also exhibits very strong absorption at the band edge, 9 allowing a large fraction of incident light to be absorbed in a few hundred nanometers of the material, which is in contrast to the hundreds of microns of the material necessary in silicon photovoltaic devices.…”

A study on the effects of amphoteric defect concentration on the characteristics parameters of In x Ga1−x N thin-film solar cells

“…In the input of device simulator SCAPS, the electron and hole mobilities can be selected in a wide range from 10 -4 to 10 4 cm 2 /Vs. These parameters are used as input electron and hole mobilities of 1000 and 170 cm 2 /Vs selected [6,11,30]. Table 1 provides information about physical parameters applied in the rest of paper.…”