Simulation of Electron Transport in InGaAs/AlGaAs HEMTs Using an Electrothermal Monte Carlo Method

Sadi, Toufik; Kelsall, R. W.; Pilgrim, N. J.

doi:10.1109/ted.2006.877698

Cited by 38 publications

(35 citation statements)

References 10 publications

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“…We previously presented results from the application of the electrothermal Monte Carlo (MC) simulator to GaAs MESFETs [3] and InGaAs/AlGaAs HEMTs [4,5]. In this paper, we present results for wurtzite GaN/AlGaN HEMTs.…”

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confidence: 99%

Electrothermal Monte Carlo simulation of submicron wurtzite GaN/AlGaN HEMTs

2006

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We present results from the simulation of the electrothermal behaviour of submicron wurtzite GaN/AlGaN High Electron Mobility Transistors (HEMTs). The simulator uses an iterative procedure which couples a Monte Carlo simulation with a fast Fourier series solution of the Heat Diffusion Equation (HDE). The results demonstrate the dependence of the extent of the thermal droop observed in the I ds -V ds characteristics and the device peak temperature on the device bias. The paper also investigates the effect of the inclusion of thermal self-consistency on the device microscopic properties and studies the dependence of the device electrothermal characteristics on the type of substrate material used.

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confidence: 99%

Electrothermal Monte Carlo simulation of submicron wurtzite GaN/AlGaN HEMTs

2006

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“…The charge transport model chosen follows an established Monte Carlo approach 18 , our implementation of which we have developed and applied over a number of years [19][20][21][22] and now extended to Ge. Since the SPAD operates in a heavily reverse-biased mode and is essentially depleted of mobile charge except during avalanche, only electron transport is included because the device relies upon these carriers for avalanche triggering in the Si layers.…”

Section: Spad Design and Modelling Approachmentioning

confidence: 99%

Influence of absorber layer dopants on performance of Ge/Si single photon avalanche diodes

Pilgrim

Ikonić

Kelsall

2013

Journal of Applied Physics

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UKMonte Carlo electronic transport simulations are applied to investigate the influence of the Ge absorber layer on the performance of Ge/Si single photon avalanche diodes (SPADs). Ge dopant type and concentration control the internal electric field gradients, which directly influence the probabilistic distribution of times from the point of charge photo-generation to that of transmission over the Ge/Si heterojunction.The electric field adjacent to the heterointerface is found to be the dominant factor in achieving rapid transmission, leading to a preference for p-type dopants in the Ge absorber. The contribution to jitter from the Ge layer is estimated and appears relatively independent of bias, though scales near-linearly with layer height.

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“…The electrothermal coupling equations, including the HDE and the related heat generation term, are described in [20]. Each electrothermal Monte Carlo iteration includes a transient period (up to 30 ps) to allow the electronic characteristics to reach steady state, and an equilibrium period (up to 30 ps) where electronic (e.g.…”

Section: Simulation Detailsmentioning

confidence: 99%

“…In such simple geometries, employing 2D solvers based on analytical models or finitedifference meshing is sufficient for a reliable study of the coupled effect of electron transport and heat diffusion. The 2D FD version of the electrothermal Monte Carlo method has been successfully employed to study transport in heterostructure devices based on several material systems, including Si [24,25], III-As [20] and III-N [26][27][28] compounds. Later work on the modeling of advanced structures such as nanowires and nanojunctions involved the use of the 3D FE schemes [29][30][31][32][33][34][35]; for this purpose, substantial efforts have been invested to carefully integrate into our simulator a finite-element package (NETGEN/NGSOLVE [36]) to solve for both Poisson's and the heat diffusion equations.…”

Section: Simulation Detailsmentioning

confidence: 99%

Monte Carlo study of self-heating in nanoscale devices

et al. 2012

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Progress in device miniaturization combined with the increase in integrated circuit packing density, as described by Moore's law, have been accompanied by an exponential increase in on-chip heat generation. In this context, there is an increasing demand for reliable electrothermal modeling techniques that accurately account for self-heating and allow a better understanding of thermal transport at the nanoscale. This paper presents a theoretical demonstration of the electrothermal phenomena in a variety of nanodevices, ranging from conventional Si-and III-V-based fieldeffect transistors (FETs) to nanowire devices. Simulation work relies on a very well-established Monte Carlo simulator considering self-heating using phonon statistics. The electrothermal simulator self-consistently couples a threedimensional (3D) electronic trajectory simulation with the solution of the heat diffusion equation. The Monte Carlo technique is very suitable for the simulation of electronic transport in nanoscale semiconductor devices, as it is free from low-field near-equilibrium approximations. In addition, the method is well-suited for electrothermal modeling, since it allows a detailed microscopic description of electron-phonon scattering which provides an inherent and direct prediction of the spatial distribution of heat generation. The paper is divided into three parts. The first T. Sadi ( ) part includes a description of the computational approach to simulate electrothermal transport in FETs. The advantages of using the simulation method are demonstrated by presenting full results from the simulation of an InGaAschannel high-electron mobility transistor (HEMT). The second part concerns electrothermal transport in conventional field-effect devices such as Si and III-V HEMTs. An investigation of self-heating effects in high-power devices, such as AlGaN/GaN HEMTs, and relevant Si-based FETs, e.g. Si/SiGe HEMTs, is presented. This part demonstrates how the analysis of self-heating effects may help us in understanding the electronic and thermal properties of nanoscale FETs. The third part of the paper consists of studying the electrothermal behavior of advanced structures. In this case, charge transport and self-heating effects are investigated in metal-insulator-semiconductor FETs (MISFETs) with a single InAs nanowire channel. Despite low heat dissipation, simulations predict significant local temperatures, due to the high current density levels and the poor thermal management in these nanowire structures.

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Simulation of Electron Transport in InGaAs/AlGaAs HEMTs Using an Electrothermal Monte Carlo Method

Cited by 38 publications

References 10 publications

Electrothermal Monte Carlo simulation of submicron wurtzite GaN/AlGaN HEMTs

Electrothermal Monte Carlo simulation of submicron wurtzite GaN/AlGaN HEMTs

Influence of absorber layer dopants on performance of Ge/Si single photon avalanche diodes

Monte Carlo study of self-heating in nanoscale devices

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