Electrothermal Monte Carlo simulation of submicron wurtzite GaN/AlGaN HEMTs

Sadi, Toufik; Kelsall, R. W.; Pilgrim, N. J.

doi:10.1007/s10825-006-0051-4

Cited by 15 publications

(10 citation statements)

References 8 publications

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“…Considering the numerous advantages offered by Nitride materials, [17][18][19][20] InGaN QWs are widely used for optoelectronic structures. 21 These structures are nowadays the key to energy-efficient lighting and display components.…”

Section: Structuresmentioning

confidence: 99%

Optimized plasmonic light emission enhancement in III-N quantum-well emitters

2015

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In recent years, experimental work has shown that significant luminescence enhancement can be obtained from quantum-well (QW) light-emitting diodes (LEDs) by using metallic grating, which diffracts efficiently optical modes and resonances trapped in these structures and converts surface plasmon (SP) modes into radiative modes. We employ a powerful simulation tool to provide a deep insight into the physics of plasmonic enhancement and present guidelines on how to optimize light-extraction in III-nitride LED structures incorporating an emitting InGaN QW located in the vicinity of a grated silver surface. The model uses first-principle theory, coupling the dyadic Green's function formalism for solving Maxwell's equations to fluctuational electrodynamics, and employs a recursive and transparent solution method allowing the fields to be written in a closed form. We demonstrate the significant effect of the type of the periodic grating and layer structure on light-extraction efficiency by simulating various structures with different grating shapes and dimensions. Careful optimization of the grating features shows that the maximum enhancement can reach a factor of around 8 as compared to the flat semiconductor structure and that the plasmonic losses can be significantly reduced.

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Section: Structuresmentioning

confidence: 99%

Optimized plasmonic light emission enhancement in III-N quantum-well emitters

2015

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“…In such simple geometries, employing 2D solvers based on analytical models or finitedifference meshing is sufficient for a reliable study of the coupled effect of electron transport and heat diffusion. The 2D FD version of the electrothermal Monte Carlo method has been successfully employed to study transport in heterostructure devices based on several material systems, including Si [24,25], III-As [20] and III-N [26][27][28] compounds. Later work on the modeling of advanced structures such as nanowires and nanojunctions involved the use of the 3D FE schemes [29][30][31][32][33][34][35]; for this purpose, substantial efforts have been invested to carefully integrate into our simulator a finite-element package (NETGEN/NGSOLVE [36]) to solve for both Poisson's and the heat diffusion equations.…”

Section: Simulation Detailsmentioning

confidence: 99%

Monte Carlo study of self-heating in nanoscale devices

et al. 2012

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Progress in device miniaturization combined with the increase in integrated circuit packing density, as described by Moore's law, have been accompanied by an exponential increase in on-chip heat generation. In this context, there is an increasing demand for reliable electrothermal modeling techniques that accurately account for self-heating and allow a better understanding of thermal transport at the nanoscale. This paper presents a theoretical demonstration of the electrothermal phenomena in a variety of nanodevices, ranging from conventional Si-and III-V-based fieldeffect transistors (FETs) to nanowire devices. Simulation work relies on a very well-established Monte Carlo simulator considering self-heating using phonon statistics. The electrothermal simulator self-consistently couples a threedimensional (3D) electronic trajectory simulation with the solution of the heat diffusion equation. The Monte Carlo technique is very suitable for the simulation of electronic transport in nanoscale semiconductor devices, as it is free from low-field near-equilibrium approximations. In addition, the method is well-suited for electrothermal modeling, since it allows a detailed microscopic description of electron-phonon scattering which provides an inherent and direct prediction of the spatial distribution of heat generation. The paper is divided into three parts. The first T. Sadi ( ) part includes a description of the computational approach to simulate electrothermal transport in FETs. The advantages of using the simulation method are demonstrated by presenting full results from the simulation of an InGaAschannel high-electron mobility transistor (HEMT). The second part concerns electrothermal transport in conventional field-effect devices such as Si and III-V HEMTs. An investigation of self-heating effects in high-power devices, such as AlGaN/GaN HEMTs, and relevant Si-based FETs, e.g. Si/SiGe HEMTs, is presented. This part demonstrates how the analysis of self-heating effects may help us in understanding the electronic and thermal properties of nanoscale FETs. The third part of the paper consists of studying the electrothermal behavior of advanced structures. In this case, charge transport and self-heating effects are investigated in metal-insulator-semiconductor FETs (MISFETs) with a single InAs nanowire channel. Despite low heat dissipation, simulations predict significant local temperatures, due to the high current density levels and the poor thermal management in these nanowire structures.

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“…121, 204501-1 conduction equation. 21,22 Such electron MC simulations have been continuously improved by considering the hot-phonon effect. 23,24 The required local temperature can be obtained from coupled thermal simulations 25 or experiments.…”

Section: Introductionmentioning

confidence: 99%

A hybrid simulation technique for electrothermal studies of two-dimensional GaN-on-SiC high electron mobility transistors

Hao

Zhao

Xiao

2017

Journal of Applied Physics

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In this work, a hybrid simulation technique is introduced for the electrothermal study of a twodimensional GaN-on-SiC high electron mobility transistor. Detailed electron and phonon transport is considered by coupled electron and phonon Monte Carlo simulations in the transistor region. For regions away from the transistor, the conventional Fourier's law is used for thermal analysis to minimize the computational load. This hybrid simulation strategy can incorporate the physical phenomena over multiple length scales, including phonon generation by hot electrons in the conduction channel, frequency-dependent phonon transport in the transistor region, and heat transfer across the whole macroscale device. Published by AIP Publishing.

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Electrothermal Monte Carlo simulation of submicron wurtzite GaN/AlGaN HEMTs

Cited by 15 publications

References 8 publications

Optimized plasmonic light emission enhancement in III-N quantum-well emitters

Optimized plasmonic light emission enhancement in III-N quantum-well emitters

Monte Carlo study of self-heating in nanoscale devices

A hybrid simulation technique for electrothermal studies of two-dimensional GaN-on-SiC high electron mobility transistors

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