Simulation, Modeling, and Crystal Growth of Cd0.9Zn0.1Te for Nuclear Spectrometers

Abstract

In the above mentioned article, two references were regrettably omitted from the final paragraph in the first column of page 1253, and inappropriately similar wording to the original references was used. The authors sincerely apologize to the authors of the references and the journal readership for this error. Please replace the passage ''Notably, the CZT crystal… …growth of other semiconductors.'' with ''CZT melt exists as a semiconductor 1 with the Prandtl number of Pr ¼ 0.41, which is a few orders of magnitude larger than that of most semiconductor materials, such as Si, GaAs, and InP. The Pr ¼ 0.41 causes a strong coupling between thermal and momentum transport, which leads to instabilities in the growth of CZT crystal.'' 2

Property Improvement in CZT via Modeling and Processing Innovations . Te-particles in vertical gradient freeze CZT: Size and Spatial Distributions and Constitutional Supercooling

“…The need for high-purity cadmium-zinc-telluride (CZT) crystals for high-resolution radiation detection is well documented and many research groups are engaged in crystal growth of CZT [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16], in fabrication of gamma-ray detectors from CZT [15,[17][18][19][20][21][22][23], and in the design of detector systems based on CZT [18,[24][25][26][27][28][29][30][31][32][33][34][35][36][37][38]. A ubiquitous problem for CZT crystals is the unwanted incorporation of Te-particles or Teprecipitates within the CZT crystal during the crystal growth process, in addition to other crystal defects.…”