Simulation, fabrication and characterization of 6500V 4H-SiC power DMOSFETs

Li, Shiyan; Líu, Hao; Huang, Runhua; Tao, Yonghong; Liu, Qiang; Li, Yun; Bai, Song

doi:10.1109/ifws.2017.8245995

Cited by 8 publications

(2 citation statements)

References 4 publications

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“…According to previous studies on the breakdown principle of VDMOS, we can know that when the device is break-down, the current mainly appears in the P+ region of P-well due to the existence of PN junction between the source and P-well. [13] Because the polysilicon region in SiC GCBTP is a high-doping concentration, and the blocking effect on carrier motion is not as strong as that of PN junction, the breakdown mechanism of SiC GCBTP is the same as that of traditional SiC VDMOS. For this reason, SiC GCBTP has the same high breakdown voltage as SiC VDMOS.…”

Section: Device Structure and Descriptionmentioning

confidence: 99%

SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current

Duan

Luo²,

Yang³

2023

Chinese Phys. B

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A novel Silicon Carbide gate-controlled bipolar field effect composite transistor with polysilicon region (SiC GCBTP) is proposed. Different from the traditional electrode connection mode of SiC VDMOS, the P+ region of P-well is connected with the gate in SiC GCBTP, and the polysilicon region is added between the P+ region and the gate. By this method, additional minority carriers can be injected into the drift region in on-state, and the distribution of minority carriers in the drift region will be optimized, so the on-state current is increased. In terms of static characteristics, it has the same high breakdown voltage (811V) as SiC VDMOS which length of drift is 5.5 μm. The on-state current of SiC GCBTP is 2.47×10-3 A/μm (V G=10V, V D=10V) which is 5.7 times that of SiC IGBT and 36.4 times that of SiC VDMOS. In terms of dynamic characteristics, the turn-on time of SiC GCBTP is only 0.425ns. And the turn-off time of SiC GCBTP is similar to SIC IGBT, which is 114.72ns.

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Section: Device Structure and Descriptionmentioning

confidence: 99%

SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current

Duan

Luo²,

Yang³

2023

Chinese Phys. B

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show abstract

“…And The breakdown mechanism of SiC GCBT is basically the same as that of SiC IGBT and SiC VDMOS in principle, because the gate, source and base are all short-circuited and grounded when turned off. And the high Vth of SiC VDMOS [10] can be effectively reduced for that when the device is turning on, the parasitic BJT turns on first, then the MOS structure turns on after the channel inversion. The voltage drop accross the p-base makes the channel potential lower than the gate potential, so the channel can be inverted.…”

Section: Device Structurementioning

confidence: 99%

Simulation Study on Dynamic and Static Characteristics of Novel SiC Gate-Controlled Bipolar-Field-Effect Composite Transistor

Zhang

Duan

Yang

2020

IEEE J. Electron Devices Soc.

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In this paper, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied. The structure is characterized by the use of the base-gate short connection mode, instead of the conventional base-source short connection mode in SiC Vertical Double-diffusion MOSFET (VDMOS). It found that the device can obviously improve many problems of SiC Insulated Gate Bipolar transistor (IGBT) caused by the p-type substrates and eliminate the latch-up effect, having very bright prospects in high power and low frequency applications. The dynamic and static characteristics of the SiC GCBT are studied in detail and compared with SiC VDMOS, SiC IGBT and Si IGBT. Through comparative studies, the analysis results indicate that SiC GCBT has superior static characteristics, including a higher breakdown voltage, a relatively smaller threshold voltage (2.98V) and lower on-state voltage drop, and a much larger on-state current which is 28% higher than that of Si IGBT and 71% higher than that of SiC IGBT. In terms of dynamic characteristics, SiC GCBT has the shortest turn-on time, and the turn-off characteristics of the device are also improved compared with SiC and Si IGBT.

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A Comprehensive Study on Electric Field Coupling Effects of Medium-Voltage SiC Power Module and Optimization Design

Sun,

Wang,

Yuan

et al. 2024

2024 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Simulation, fabrication and characterization of 6500V 4H-SiC power DMOSFETs

Cited by 8 publications

References 4 publications

SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current

SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current

Simulation Study on Dynamic and Static Characteristics of Novel SiC Gate-Controlled Bipolar-Field-Effect Composite Transistor

A Comprehensive Study on Electric Field Coupling Effects of Medium-Voltage SiC Power Module and Optimization Design

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