Simulation design of a high-breakdown-voltage p-GaN-gate GaN HEMT with a hybrid AlGaN buffer layer for power electronics applications

Liu, Yong; Yu, Qin; Du, Jiangfeng

doi:10.1007/s10825-020-01541-2

Cited by 14 publications

(5 citation statements)

References 35 publications

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“…Bulk GaN devices have garnered significant research interest due to their potential for higher performance and enhanced reliability. However, the availability of suitable substrates GaN SBDs: [61,67,69,72,73,468,469]; GaN PNDs: [79-82, 89, 90, 470]; GaN JBS, SJs: [92,93,95]; AlGaN/AlN: [214,236,237,250,251,471]; diamond: [281, 287, 292-294, 302, 472-475]; Ga2O3 SBDs: [353,412,413,415,[417][418][419]476]; Ga2O3/NiO PNDs: [354,421,423,424,477] and (b) lateral GaN: [114,120,128,478,479] and references therein [480], and references therein; vertical GaN: [131,134,135,139,141,145,147,481]; AlGaN: [215,216,…”

Section: Discussionmentioning

confidence: 99%

“…BFOM unipolar limit and experimental data for (a) two-terminal and (b) three-terminal devices. References for (a) GaN SBDs: [61, 67, 69, 72, 73, 468, 469]; GaN PNDs: [79-82, 89, 90, 470]; GaN JBS, SJs: [92, 93, 95]; AlGaN/AlN: [214, 236, 237, 250, 251, 471]; diamond: [281, 287, 292-294, 302, 472-475]; Ga2O3 SBDs: [353, 412, 413, 415, 417-419, 476]; Ga2O3/NiO PNDs: [354, 421, 423, 424, 477] and (b) lateral GaN:[114,120,128,478,479] and references therein[480], and references therein; vertical GaN:[131,134,135,139,141,145,147,481]; AlGaN:[215,216,233,239,482]; diamond:[309,312,[483][484][485]; lateral Ga2O3:[432-434, 486, 487] Ga2O3 vertical[435,438,442,443,488,489].…”

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confidence: 99%

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From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Woo,

Bian,

Noshin

et al. 2024

J. Phys. Mater.

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Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material characteristics can enable more robust and efficient devices, particularly in scenarios involving high power, high frequency, and extreme environmental conditions. Despite the promising outlook, the physics of UWBG materials remains inadequately understood, leading to a notable gap between theoretical predictions and experimental device behavior. To address this knowledge gap and pinpoint areas where further research can have the most significant impact, this review provides an overview of the progress and limitations in U/WBG materials. The review commences by discussing Gallium Nitride, a more mature WBG material that serves as a foundation for establishing fundamental concepts and addressing associated challenges. Subsequently, the focus shifts to the examination of various UWBG materials, including AlGaN/AlN, Diamond, and Ga2O3. For each of these materials, the review delves into their unique properties, growth methods, and current state-of-the-art devices, with a primary emphasis on their applications in power and radio-frequency electronics.

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Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Woo,

Bian,

Noshin

et al. 2024

J. Phys. Mater.

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“…The fabricated normally-off AlGaN/GaN MIS-HEMT with a recessed gate structure was grown on a 6 in commercial Si substrate by MOCVD, which consisted of the 1 nm GaN cap layer, a 25 nm Al 0.25 Ga 0.75 N barrier layer, a 1 nm AlN interlayer, a 300 nm undoped GaN channel layer, and a 4 µm AlGaN buffer layer [ 35 , 36 ], as shown in Figure 1 a. The normally-off MIS-HEMT with a recessed gate process started with mesa isolation, which was performed by the ICP-RIE to etch a specific region.…”

Section: Devices’ Fabricationmentioning

confidence: 99%

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

Liu

Chen

et al. 2023

Micromachines

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A typical method for normally-off operation, the metal–insulator–semiconductor-high electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches, gate recessed MIS-HEMT have demonstrated a high gate voltage sweep and low leakage current characteristics. Despite their high performance, obtaining low-damage techniques in gate recess processing has so far proven too challenging. In this letter, we demonstrate a high current density and high breakdown down voltage of a MIS-HEMT with a recessed gate by the low damage gate recessed etching of atomic layer etching (ALE) technology. After the remaining 3.7 nm of the AlGaN recessed gate was formed, the surface roughness (Ra of 0.40 nm) was almost the same as the surface without ALE (no etching) as measured by atomic force microscopy (AFM). Furthermore, the devices demonstrate state-of-the-art characteristics with a competitive maximum drain current of 608 mA/mm at a VG of 6 V and a threshold voltage of +2.0 V. The devices also show an on/off current ratio of 109 and an off-state hard breakdown voltage of 1190 V. The low damage of ALE technology was introduced into the MIS-HEMT with the recessed gate, which effectively reduced trapping states at the interface to obtain the low on-resistance (Ron) of 6.8 Ω·mm and high breakdown voltage performance.

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“…With the development of microwave communication technology, higher requirements are put forward for the frequency and power characteristics of microelectronic devices. GaN-based devices, such as GaN/AlGaN high electron mobility transistors (HEMT) and GaN diodes, have been widely used as power devices because of their high breakdown voltage [ 1 , 2 , 3 ] and operation frequency [ 4 , 5 , 6 ]. Although GaN devices have many advantages, they are still suffering from some problems such as short channel effect [ 7 , 8 , 9 ] and current collapse effect [ 10 , 11 , 12 ].…”

Section: Introductionmentioning

confidence: 99%

Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

et al. 2022

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A side ohmic contact mode for the double channel GaN/AlGaN epitaxial layer is proposed in this paper. Rectangle transmission line model (TLM) electrodes are prepared, and the specific contact resistance is tested at the annealing temperatures from 700 °C to 850 °C. The results show that the minimum specific contact resistance is 2.58 × 10−7 Ω·cm2 at the annealing temperature of 750 °C, which is three to four times lower than the surface contact mode. Scanning electron microscope (SEM), energy dispersive spectrometer (EDS), and atomic force microscope (AFM) were carried out for the analysis of the morphology, element composition, and the height fluctuation at the contact edge. With the increase in the annealing temperature, the specific contact resistance decreases due to the alloying of electrodes and the raised number of N vacancies. However, when the annealing temperature exceeds 800 °C, the state of the stress in the electrode films transforms from compressive stress to tensile stress. Besides, the volume expansion of metal electrode film and the increase in the roughness at the contact edge leads to the degradation of the side ohmic contact characteristics.

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Simulation design of a high-breakdown-voltage p-GaN-gate GaN HEMT with a hybrid AlGaN buffer layer for power electronics applications

Cited by 14 publications

References 35 publications

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

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