Simulation, design and fabrication of large area implanted silicon two-dimensional position sensitive radiation detectors

Abstract

The fabrication process of a two-dimensional position sensitive radiation detector (2-D PSD) with a 4 cm 2 active area is presented. Critical steps in the fabrication are emphasised . Edge effects represent critical problems in producing large area ion implanted silicon radiation detectors with low leakage currents and a high breakdown voltage (BV) . Two methods have been used to increase the breakdown voltage of the junction : the use of i) floating held limiting rings (FFLR) and ii) field plates (FP) . Several situations have been simulated analytically and numerically. A comparison of the theoretical results with the measurements realised using the detectors is presented. It is shown that a substantial improvement in the BV of the detector can be achieved by these methods.