Simulation and optimization of silicon thermal CVD through CFD integrating Taguchi method

Cheng, Wen-Tung; Li, H.C.; Huang, Chi-Feng

doi:10.1016/j.cej.2007.05.042

Cited by 23 publications

(5 citation statements)

References 23 publications

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“…When species mixing or chemical reaction are present, species conservation equations also must be solved. According to the description above, four main equations are expressed as below: 10,11,12 1. Continuity equation:…”

Section: Cfd Model and Methodsmentioning

confidence: 99%

Simulation analysis of influence factors for preparation of dispersed cap-open carbon nanotubes using CCVD

Sun

Shu

et al. 2011

Journal of Reinforced Plastics and Composites

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In order to investigate the reaction mechanism and production rate for the growth of dispersed cap-open carbon nanotubes (CNTs) in catalyst chemical vapor deposition, computational fluid dynamics (CFD) model with multi-step reaction was developed in this study. The CFD calculations coupled with temperature field and concentration field demonstrated that laminar flow conditions were presented and steep thermal gradient and concentration gradient existed in the axis of the reactor. Applying the CFD calculation, total deposition rate of CNTs in the reactor were predicted with the variation of the processing parameters. The results show that the maximum deposition rate can be obtained with the temperature from 1050 to 1200 K and the flow rate of the ethanol should be controlled over 300 sccm.

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Section: Cfd Model and Methodsmentioning

confidence: 99%

Simulation analysis of influence factors for preparation of dispersed cap-open carbon nanotubes using CCVD

Sun

Shu

et al. 2011

Journal of Reinforced Plastics and Composites

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“…In the late 1980s, it was reported that hydrogen was used to reduce tungsten hexafluoride to prepare the special-shaped metal tungsten products with high density and purity. − However, these reports have little influence on the microstructures, structures, and properties of tungsten coating by the specific process and the temperature distribution inside a reactor. At present, more and more scholars have studied the CFD simulation of a CVD reactor, − but few have studied the CFD simulation of a tungsten CVD reactor.…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation Study on Flow and Heat Transfer of the Tungsten Crucible CVD Reactor

Peng

Dong

Li³

et al. 2022

ACS Omega

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In order to investigate the optimization of the performance and structure of a tungsten crucible CVD reactor, the CFD simulation method was used in this paper to simulate the internal flow of the tungsten crucible CVD reactor. The velocity distribution and temperature distribution in the reactor were obtained. The simulation results show that the axial and radial heat convection will occur between the susceptor and the outer wall surface, but the axial heat convection is more intense. Moreover, it was found that the temperature distribution in the CVD reactor was more uniform and reasonable when the upper gas inlet was applied, which was beneficial to the reduction and deposition processes of tungsten. The molar ratio of H 2 to WF 6 has a great influence on the deposition rate of tungsten, and excess H 2 is not conducive to the deposition of tungsten. Thermal radiation has a great influence on the temperature distribution of CVD reactors. It cannot be neglected.

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“…However, all of the design and control problems of process systems can be defined as an inverse problem. Some efforts of simulation-based optimization of process systems have been presented by Chiu et al, 25 Mitrovic et al, 26 Cheng et al, 27 and Po et al 28 A positive simulation model integrated with an optimal algorithm is a preferred architecture for these approaches to solve the inverse problems. Yasaka et al 29,30 briefly elaborated this inverse problem and proposed a novel simulation-based approach that made the plasma profile approximate the expected one via an appropriate control of the input power along the radial direction of the electrode.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

New simulation-based approach for the profile control in a process chamber: Fluid, thermal, and plasma profile

Xiang

Xia

Wang

et al. 2015

Proceedings of the Institution of Mechanical Engineers, Part E:

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Process chamber is the core unit of chemical vapor deposition and etching, and the physical fields in it have fatal effect on process quality. It is significant and difficult for improving the process performance to regulate the fields' profiles finely. Two design solutions for the profile regulation are proposed: controllable type and resistance type. A novel profile error feedback method is presented, and a simulation-based auto-design framework is established. The profile error feedback method is in a quasi-closed-loop-control mode. It starts from an initial guessed sequence of the design/control variables and predicts a better sequence via feedback of the profile error between the output-targeted profile and the expected one. It never stops until the profile error is narrowed in the preset tolerance. Three kinds of numerical experiments about the regulation of the thermal, fluid, and plasma profile are set to test the effectiveness and feasibility of the profile error feedback method and the two kinds of design schemes.

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Simulation and optimization of silicon thermal CVD through CFD integrating Taguchi method

Cited by 23 publications

References 23 publications

Simulation analysis of influence factors for preparation of dispersed cap-open carbon nanotubes using CCVD

Simulation analysis of influence factors for preparation of dispersed cap-open carbon nanotubes using CCVD

Numerical Simulation Study on Flow and Heat Transfer of the Tungsten Crucible CVD Reactor

New simulation-based approach for the profile control in a process chamber: Fluid, thermal, and plasma profile

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