2000
DOI: 10.1016/s0924-4247(99)00343-x
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Simulation and fabrication of piezoresistive membrane type MEMS strain sensors

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Cited by 54 publications
(29 citation statements)
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“…Usually, the piezoresistor uses the change rate of the resistance from 0.1% to 2% [13], and it is represented as the blue domain in Fig. 2 (a).…”
Section: Finger and Fingertip Designmentioning
confidence: 99%
“…Usually, the piezoresistor uses the change rate of the resistance from 0.1% to 2% [13], and it is represented as the blue domain in Fig. 2 (a).…”
Section: Finger and Fingertip Designmentioning
confidence: 99%
“…Usually, the piezoresistor uses the change rate of the resistance from 0.10% to 2% [5]. The domain is represented as the blue domain in Fig.…”
Section: Micro-gripper Designmentioning
confidence: 99%
“…Several physical sensing principles have been explored in MEMS strain sensors, including the modulation of optical, capacitive, piezoelectric, and piezoresistive properties or frequency shift [15,16]. More particularly, piezoresistive MEMS strain sensors are favourable and attractive, due to a number of key advantages such as high sensitivity [17], low noise, better scaling characteristics, low cost and their ability to have the detection electronics circuit further away from the sensor, or on the same sensing board.…”
Section: Introductionmentioning
confidence: 99%