SIMS round-robin study of depth profiling of arsenic implants in silicon

Nondestructive dose determination and depth profiling of arsenic ultrashallow junctions with total reflection X-ray fluorescence analysis compared to dynamic secondary ion mass spectrometry

“…The secondary ions were quantified after normalizing them to a matrix species. We investigated three different kinds of normalization: by normalizing the 28 Si 75 As À curves to the average of the 28 Si 2 À intensity after the sputtering steady state was reached (method A); point by point to 28 Si 2 À (method B), i.e., by dividing at each depth the SiAs À signal by the correspondent Si 2 À value; point by point to 28 Si À (method C; [11]). The relative sensitivity factor (RSF) necessary to convert the normalized counts to concentration [7] was determined analysing a 5-keV arsenic implanted silicon with a dose of 1.21 Â 10 15 atoms/cm 2 as determined by LEXES measurement.…”

Atomic spectrometry update. Industrial analysis: metals, chemicals and advanced materials

“…One paper that reported the results of a SIMS round-robin study of depth profiling of As implants in silicon is worth discussing, however. 300 Doses of between 3 6 10 16 and 3 6 10 14 ions cm 22 were implanted into the silicon, the latter providing a peak As concentration of 11 at.%. The use of ultra-low energy SIMS for depth profiling is a technique that is reportedly growing rapidly, especially in the semiconductor industry.…”

Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques

“…In each of these regions the ion yield and the sputtering rate can notably vary so to affect the quantification. In the attempt of overcoming these problems as a first step we corrected the profiles using three different normalization methods [5]: (a) normalization with the average intensity of 28 Si 2 -, (b) 28 Si 75 As -/ 28 Si 2 -'point-by-point' normalization, (c) 28 Si 75 As -/ 28 Si -'point-by-point' normalization.…”

“…In fact to ensure low electrical resistivity the shallow implants are usually performed at very high fluence. In "non-shallow regime" (100 keV 75 As implanted silicon, analysis with a 3 kev Cs beam) Tomita et al [5] report that monitoring 28 Si 75 Asand normalizing "point-bypoint" to 28 Si 2 ensures a Relative Sensitivity Factor (RSF) in silicon constant against arsenic concentration ranging from 5.8x10 19 to 5.8x10 21 at/cm 3 . This means that the ion yield remains constant.…”

“…Secondary Ion Mass Spectrometry has been considered as the most suitable tool to obtain dopant depth profiles because of its sensitivity and precision [2,4,5]. Nowadays, the new technology requests for ultra shallow profile characterizations have severe analytical requirements, especially in the dynamic range extension, in the quantification accuracy improvement, and in the depth scale calibration.…”