Nondestructive dose determination and depth profiling of arsenic ultrashallow junctions with total reflection X-ray fluorescence analysis compared to dynamic secondary ion mass spectrometry

Pepponi, G.; Streli, Christina; Wobrauschek, P.; Zoeger, N.; Luening, K.; Pianetta, P.; Giubertoni, D.; Barozzi, M.; Bersani, M.

doi:10.1016/j.sab.2004.04.014

Cited by 25 publications

(15 citation statements)

References 11 publications

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“…GI-XRF is not well suited for completely unknown samples but is rather suitable for checking a given concentration/depth profile, e.g. for ultra-shallow junctions [21].…”

Section: Non-destructive Analysis Of Transition Layers By Gi-xrfmentioning

confidence: 99%

Challenges of total reflection X-ray fluorescence for surface- and thin-layer analysis

Klockenkämper

2006

Spectrochimica Acta Part B: Atomic Spectroscopy

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“…GI-XRF is not well suited for completely unknown samples but is rather suitable for checking a given concentration/depth profile, e.g. for ultra-shallow junctions [21].…”

Section: Non-destructive Analysis Of Transition Layers By Gi-xrfmentioning

confidence: 99%

Challenges of total reflection X-ray fluorescence for surface- and thin-layer analysis

Klockenkämper

2006

Spectrochimica Acta Part B: Atomic Spectroscopy

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“…It was shown in Pepponi et al 18 that the penetration depth of the implanted particles is proportional to their kinetic energy. The velocity of the particles should have a normal (Gaussian-type) distribution.…”

Section: Fitting Procedures Descriptionmentioning

confidence: 99%

Numerical approach for depth profiling with GE‐XRF

Okhrimovskyy¹,

Tsuji²

2006

X-Ray Spectrometry

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The atomic percentage of implanted particles on the sample surface was estimated from the peak position of angle dependency of the experimental grazing exit X-ray fluorescence (GE-XRF) intensity profile. An algorithm for constructing three-parametric Gaussian-type depth profiles of atoms implanted in a substrate was developed. The position of the maximum and its value of the implanted particles distribution as well as a dispersion of that distribution were considered in the calculations. The model was applied to the intensity of the As Ka line emitted from As atoms implanted in a Si wafer. The least-square method was used to minimize the overall difference between experimental and calculated GE-XRF intensity. Optimum parameters of the particle distribution were determined in this procedure. Using that profile, the depth dependencies of effective real and imaginary parts of atomic scattering factor and complex index of refraction of the sample material were evaluated.

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“…The accuracy of the method is however strongly influence by the distribution of the impurities in the layer, as demonstrated for residual Cl analysis in HfO 2 layers deposited in an atomic layer deposition process [109]. Other applications are in the characterization of implants in Si substrates in different methods, going from direct analysis over combination with chemical etching or physical sputtering and grazing incidence methods [115][116][117][118][119][120][121].…”

Section: Direct-txrfmentioning

confidence: 99%

Trends in total reflection X-ray fluorescence spectrometry for metallic contamination control in semiconductor nanotechnology

Hellin

Gendt

Valckx

et al. 2006

Spectrochimica Acta Part B: Atomic Spectroscopy

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Nondestructive dose determination and depth profiling of arsenic ultrashallow junctions with total reflection X-ray fluorescence analysis compared to dynamic secondary ion mass spectrometry

Cited by 25 publications

References 11 publications

Challenges of total reflection X-ray fluorescence for surface- and thin-layer analysis

Challenges of total reflection X-ray fluorescence for surface- and thin-layer analysis

Numerical approach for depth profiling with GE‐XRF

Trends in total reflection X-ray fluorescence spectrometry for metallic contamination control in semiconductor nanotechnology

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