SIMS depth profiling of vertical p-channel Si-MOS transistor structures

Oxygen beam SIMS depth profiling of Si1−xGex layers: transient processes

“…The results are in good correlation to Ref. 17 , where the erosion rates for amorphous Si 1 x Ge x : H alloys were investigated. Comparison of the data in Fig.…”

“…1(b) shows neither a deviation between hydrogenated amorphous and crystalline Si 1 x Ge x material nor a significant deviation between the different primary beam energies applied in Ref. 17 and in this work (9 keV and 12 keV, normal incidence).…”

“…We achieve good accordance with experiment and characterize sputtering and depth profiling of crystalline Si 1 x Ge x layers in a wide composition range studied in the past only for amorphous materials (a-SiGe:H). 17 The paper is organized as follows: after a short description of the experiments we present the experimental results of Si 1 x Ge x sputtering with a near-normal oxygen beam and then show the physical processes in the subsurface region and the approaches for computer simulation. Finally, we compare the results of the simulation with the experimental results and discuss sputtering of capped Si 1 x Ge x layers.…”

Quantification of grafted poly(ethylene glycol)‐silanes on silicon by time‐of‐flight secondary ion mass spectrometry

“…TOF‐SIMS is a technique based on mass spectrometry and is therefore said not to be a quantitative technique. However, in spite of TOF‐SIMS not being a quantitative technique in principle, many workers have made extensive efforts to find ways to use TOF‐SIMS quantitatively 12–62. Whether or not TOF‐SIMS can be said to be quantitative is still debated.…”