SIMS analysis of HfSiO(N) thin films

Atomic spectrometry update. Atomic mass spectrometry

“…The modulated analyses eliminated the ten-fold increase in measured signal, compared with the expected signal, usually observed in steady-state analyses at m/z 156 for 156 Gd in the presence of 1 mg l À1 Ce. The correction method was also tested for multiple analyte-oxide interferences ( 89 Y 16 O on 105 Pd, 90 Zr 16 O on 106 Pd, 91 Zr 16 O on 107 Ag and 181 Ta 16 O on 197 Au) using a compromise flow rate based on that for 156 Gd and 140 Ce 16 O. While ratios of measured analyte responses to expected analyte responses were closer to unity for modulated than steady state analyses, the method did not correct the interference fully.…”

“…Back-side depth profiling was also mandatory to make SIMS data consistent with those obtained with high-resolution RBS for HfSiON films, prepared by nitridation of 4-5 nm thick HFSiO films on silicon. 197 A variety of bombardment conditions in the conventional front side sputtering, including 500 eV Cs + sputtering at various incidence angles with and without oxygen and cooling of the sample to À120 1C, gave unsatisfactory results. Deposition of a 20-30 nm Si capping layer to avoid contact of the original top layer with the insulating glass substrate during analysis and back-side thinning (0.1-0.2 mm) of the sample allowed excellent agreement to be obtained between SIMS using 2 keV O 2 + projectiles and RBS.…”