Simple spice based modeling platform for 4.5 kV power IGBT modules

Nawaz, Muhammad; Chimento, F.; Mora, Niccolò; Zannoni, Marco

doi:10.1109/ecce.2013.6646712

Cited by 8 publications

(6 citation statements)

References 22 publications

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“…Table 2 arameters for Si based IGBTs and 2.0kA StakPak power This is the natural result due to the fact that the hyperbolic tangent function in the collector current equation produces some trade-off between linear and saturation region of collector current versus collector bias operation for a given gate voltage above the threshold. For very high power applications, this device behavior cannot be modelled accurately as reported in earlier work [5,6,9]. Principally, the IGBT model may further be improved by tuning some parameters, deviating from the nominal values mentioned in the datasheet or from their physical range of values.…”

Section: Results Anmentioning

confidence: 99%

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A temperature dependent simple spice based modeling platform for power IGBT modules

Sfakianakis

Nawaz²,

Chimento³

2014

2014 IEEE Energy Conversion Congress and Exposition (ECCE)

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This paper deals with the development of a PSpice based temperature dependent modelling platform for the evaluation of silicon based IGBT power modules. The developed device modelling platform is intended to be used for the design and assessment of converter valves/cells for potential high power applications in transmission and distribution networks. An extended version of a previous modelling platform implemented in PSpice is presented here taking into account temperature dependence up to (and even beyond) the specified junction temperature of 125 o C of 4.5kV StakPak power modules. A set of device modelling parameters (both for IGBTs and diodes) have first been extracted and verified with static and dynamic comparison of experimental data from 4.5kV and 2.0kA Si based IGBT power modules. An overall fair comparison is achieved with varying set of bus voltages and load currents and at different temperatures.

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Section: Results Anmentioning

confidence: 99%

“…This modeling approach has earlier been used to develop a complete modeling platform (i.e., Bus bar, Gate Drive Unit, and IGBT power modules) [5,6] in order to predict the circuit behaviour at cell level and assess the cell performance and investigate various design concepts at room temperature.…”

Section: Introductionmentioning

confidence: 99%

A temperature dependent simple spice based modeling platform for power IGBT modules

Sfakianakis

Nawaz²,

Chimento³

2014

2014 IEEE Energy Conversion Congress and Exposition (ECCE)

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“…This approach has been utilized over a very broad range of power levels including 4.5 kV, 2 kA IGBT modules used for traction applications [17]. The approaches include physics-based models and those derived using an equivalent circuit approach.…”

Section: Discussionmentioning

confidence: 99%

IGBT Models

Baliga

2015

The IGBT Device

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“…8. The behaviour of the diodes within the blocked SM were modelled using the parameters for a similarly sized high power diode given in [20]. From time 0-50 µs the SMs are conducting the arm current and the thyristor assembly is in a blocked state.…”

Section: A Differential Voltage Generationmentioning

confidence: 99%

“…9. The behaviour of the diodes within the blocked SM were modelled using the parameters for a similarly sized high power diode given in [20]. The thyristors are commutated by a small differential voltage (step 1) generated by two SMs in the parallel stack (t=100 µs).…”

Section: A Differential Voltage Generationmentioning

confidence: 99%

Thyristor-Bypassed Submodule Power-Groups for Achieving High-Efficiency, DC Fault Tolerant Multilevel VSCs

Judge

Merlin

Green

et al. 2018

IEEE Trans. Power Delivery

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Achieving DC fault tolerance in modular multilevel converters requires the use of a significant number of Sub-Modules (SMs) which are capable of generating a negative voltage. This results in an increase in the number of semiconductor devices in the current path, increasing converter conduction losses. This paper introduces a thyristor augmented multilevel structure called a Power-Group (PG), which replaces the stacks of SMs in modular converters. Each PG is formed out of a series stack of SMs with a parallel force-commutated thyristor branch, which is used during normal operation as a low loss bypass path in order to achieve significant reduction in overall losses. The PG also offers negative voltage capability and so can be used to construct high efficiency DC fault tolerant converters. Methods of achieving the turn-on and turn-off of the thyristors by using voltages generated by the parallel stack of SMs within each PG are presented, while keeping both the required size of the commutation inductor, and the thyristor turn-off losses low. Efficiency estimates indicate that this concept could result in converter topologies with power-losses as low as 0.3% rated power, whilst retaining high quality current waveforms and achieving tolerance to both AC and DC faults.

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Simple spice based modeling platform for 4.5 kV power IGBT modules

Cited by 8 publications

References 22 publications

A temperature dependent simple spice based modeling platform for power IGBT modules

A temperature dependent simple spice based modeling platform for power IGBT modules

IGBT Models

Thyristor-Bypassed Submodule Power-Groups for Achieving High-Efficiency, DC Fault Tolerant Multilevel VSCs

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