Simple ‘reconciliation’ MOSFET model valid in all regions

Tsividis, Y.; Suyama, K.; Vavelidis, K.

doi:10.1049/el:19950256

Cited by 65 publications

(20 citation statements)

References 7 publications

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“…The main nonlinear element in this equivalent circuit is the i d current source which models the channel current of the device. The equation for the channel current in an NMOS transistor can be written as [3]:…”

Section: Sources Of Nonlinearity In Class-ab Power Amplifiersmentioning

confidence: 99%

Improving linearity in class-AB power amplifiers using a body-biased NMOS predistortion stage

Rashtian

Mirabbasi

2013

2013 International Green Computing Conference Proceedings

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A technique for improving the linearity of CMOS class-AB power amplifiers (PAs) is introduced. The technique is based on compensating for the voltage-dependent nonlinear gate-source capacitance of the input transistor of the PA. This compensation is achieved through using an NMOS capacitor, i.e., an NMOS transistor with its source and drain shorted, as a predistortion stage. To enhance cancellation of the nonlinearity, body biasing is incorporated as an additional control scheme into the predistortion stage. As a proof-of-concept, a 2.4-GHz class-AB power amplifier with the proposed predistortion stage has been designed and laid out in a 0.13-µm CMOS technology. Postlayout simulation results show that the third-order input-referred intercept point (IIP3) of the designed PA improves by more than 3-dB when the bulk voltage of the predistortion device is biased appropriately. The PA achieves unsaturated output power of +20 dBm while drawing 125 mA from a 1.2 V supply voltage.

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Section: Sources Of Nonlinearity In Class-ab Power Amplifiersmentioning

confidence: 99%

Improving linearity in class-AB power amplifiers using a body-biased NMOS predistortion stage

Rashtian

Mirabbasi

2013

2013 International Green Computing Conference Proceedings

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“…The operating point of the transistors varies periodically with time. Such large-signal behavior of M2 is described by the semi-empirical ''single-piece'' MOS transistor model presented in [14][15][16][17], which uses the same kind of smooth interpolation between the operation regions. The drain current of M2 can be given by…”

Section: Linearitymentioning

confidence: 99%

Analysis and design of a 1.0-V CMOS mixer based on variable load technique

Wei¹,

Dai²

2012

Microelectronics Journal

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“…Ignoring reactive effects, the drain current i ds in MOS devices shows dependence on the gate-to-source (v gs ) and drain-to-source (v ds ) voltages [6] and can be expressed as a Taylor series expansion in v gs and v ds [7], [8], [9] …”

Section: Device and Circuit Level Linearizationmentioning

confidence: 99%

Managing linearity in radio front-ends

Gharpurey

2011

2011 IEEE Custom Integrated Circuits Conference (CICC)

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Front-end linearity plays a crucial role in determining the overall performance of a radio receiver. Nonlinearity can impact performance in several ways, including degradation in sensitivity, reduction in gain and the appearance of spurious energy within the frequency band of interest from out-of-band sources. In this paper, an overview of techniques for enhancing front-end linearity is presented. Circuit and devicelevel techniques, as well as architectures for linearization are described.

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Simple ‘reconciliation’ MOSFET model valid in all regions

Cited by 65 publications

References 7 publications

Improving linearity in class-AB power amplifiers using a body-biased NMOS predistortion stage

Improving linearity in class-AB power amplifiers using a body-biased NMOS predistortion stage

Analysis and design of a 1.0-V CMOS mixer based on variable load technique

Managing linearity in radio front-ends

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