Simple Method for Phosphorus Diffusion on <100> Oriented P-Type Silicon Using New Phosphorus Gel as Dopant

Abstract

In this work, we try to make a p-type monocristalline silicon pn junction using an easier doping method. We combined spin-coating thin film deposition method and solid doping technique. This technique can be considered as variety of the SOD method.In this study, phosphorous-based gel compounds was prepared and deposited by spin coating. Heat treatment would thus, after deposition of thin layer, diffuse phosphorus atoms into the substrate to obtain a pn diode. Study by Secondary Ions Mass Spectrometry (SIMS) showed a surface phosphorus concentration of 10 20 at/cm 3 incorporated within the silicon substrate to a depth of 300 nm. The microwave phase-shift (µW-PS) technique is used to determine the bulk lifetime (τ b ) of minority carriers. In this technique, the phase-shift between a microwave beam (10 GHz) and a sine-modulated infrared excitation is related to τ b and to the surface recombination velocity (S) (Palais, Clerc, Arcari, Stemmer & Martinuzzi, 2003). The lifetime τ b mean values vary from 7 µs for a p-type Silicon to 97 µs for phosphorus-diffused silicon. The surface recombination velocity S varies from around 500 to 1000 cm.s -1 .

Probe assisted localized doping of aluminum into silicon substrates

“…For example, in probe-assisted P-doping, it should be possible to indent through an overcoat layer of highly doped phosphosilicate glass (PSG) film to introduce P-dopants into the underlying substrate. 27,28 While we have previously shown that doping concentrations can be estimated from the measured CPD, 29 the focus of this paper is to demonstrate the concepts of probe assisted localized doping of Si substrates. Special cross-calibrated Al-doped samples would be needed to provide quantitative dopant concentrations for this PAD demonstration.…”