Simple estimation of the effect of hot-carrier degradation on scaled nMOSFETs

Abstract

The influence of parasitic charge at the Si-SiO 2 interface on the characteristics of n-channel metal oxide semiconductor field effect transistors (nMOSFETs) scaled down to a feature size of 25 nm is studied. The results are that the impact of parasitic charge on threshold voltage and drain current degradation significantly decreases. Additionally, as the hot-electron injection current densities are lowered for scaled-down nMOS transistors, less charge build-up occurs. This opens the perspective to make use of alternative gate dielectrics even if they have a higher interface trap density. These materials offer the advantage of greater dielectric constants than silicon oxide, so that a physically thicker dielectric will limit the gate tunnelling current.

Characterization of physical and electrical properties of BaTiO3 films deposited on p-Si by modified polymeric precursors

“…Literature reports, dating back 10 years, refer to such leakage currents for a variety of devices with high-k dielectrics. 2,6,8,18,19 The origin of these currents was primarily attributed to either space charge limited currents or PooleFrenkel related effects. 1,6,8 In order to determine the mechanism which causes the leakage current, several conduction mechanisms were tested.…”

“…These issues have been reported and analysed concerning different materials and deposition techniques while recent reports indicate that degradation mechanisms need to be addressed in more detail if more complex systems are to be built. 6,18,19 In this paper, we will report the electrical properties of MOSCAPs constructed with the BTO films deposited on p-Si using our modified polymeric precursor method. The aim is to study the electrical properties, identify possible defects, and compare the results to those recently published on similar capacitors built with sputtered films deposited at low temperature.…”