SIMMWIC rectennas on high-resistivity silicon and CMOS compatibility

Strohm, K.M.; Buechler, J.; Kasper, E.

doi:10.1109/22.668681

Cited by 38 publications

(7 citation statements)

References 13 publications

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“…Die Verwendung von Silizium-Substraten ermöglicht zusammen mit der Verwendung der SIMMWIC (silicon monolithic mm-wave integrated circuit) Technologie [1] eine kostengünstige Herstellung von HF-Modulen. Dort sind kleine Bauformen und kostengünstige Fertigung bei großen Stückzahlen gefordert.…”

Section: Einführungunclassified

Systemintegration von Mikrowellen Schottky-Mischern und MEMS-HF-Schaltern

Schöllhorn¹,

Morschbach²,

Haak³

et al. 2003

Frequenz

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ÜbersichtIn den vorangegangenen Jahren wurden sowohl auf dem Gebiet der integrierten Millimeterwellen-Schaltungen auf Silizium (SIMMWIC) als auch im Bereich der Mikrosystemtechnik große Fortschritte erzielt. In der vorliegenden Arbeit wird ein Integrationskonzept von Mikrowellen-Schottky-Mischern und MEMS-HF-Schaltern vorgestellt. Neben dem Integrationskonzept und dem Herstellungsprozeß werden die Charakterisierung der Schottky-Dioden und die Anforderung für einen "zero-bias"-und des MOTT-Betriebes erläutert. AbstractIn recent years, great advances have been made in the field of silicon millimeter-wave integrated circuits (SIMM-WIC) as well as in Microsystems technology. This paper presents a integration concept for microwave Schottky-Mixer and MEMS-RF-Switchers. Beneath the integration concept and the fabrication process will be the characterization of the Schottky-diodes also as the requirements for an "zero-bias"-and the MOTT-mode elucidated.Für die Dokumentation

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Section: Einführungunclassified

Systemintegration von Mikrowellen Schottky-Mischern und MEMS-HF-Schaltern

Schöllhorn¹,

Morschbach²,

Haak³

et al. 2003

Frequenz

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“…Strohm et al reported the successful implementation of rectennas on high-resistivity silicon wafers in [6], but tbe rectennas were used as sensors for the detection of millimeter-wave signals at a frequency of 63 GHz. In [7], integrated dipole antennas on silicon substrates were demonstrated for intra-chip communication, but the distance between the transmitting and receiving antennas was less than 5 em, since they were both on a silicon die of 5.3 cm x 4.1 cm.…”

Section: Introductionmentioning

confidence: 99%

Powering autonomous cubic-millimeter devices

Mickle

Mats

et al. 2006

IEEE Antennas Propag. Mag.

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The reported results are concerned with powering miniature autonomous devices using radio-frequency (RF) energy, not requiring batteries or wires. The century-old concept of transmitting energy using RF is now practical for numerous applications. The method of evaluating the receiving area of miniature antennas is presented, and implemented using a particular antenna profile with inherent electrical inductance and capaCitance properties. The research demonstrates the ability to obtain the theoretical antenna effective area. The results facilitate the economical fabrication of an antenna as an integral part of a printed circuit board or complementary metal-oxide-semiconductor (CMOS) device.

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“…Due to its "majority carrier" property [1], the cut-off frequency of schottky diode can be well achieved in THz range [2]. Together with antenna, the rectenna can be realized for wireless RF power detection [3] or energy harvesting applications [4]. In this work, the design and the small signal characterization of a monolithic integrated 85 GHz schottky rectenna are presented.…”

Section: Introductionmentioning

confidence: 99%

A monolithic integrated 85 GHz schottky rectenna with dynamic tuning range of the conversion voltage

Zhang

Kasper

Oehme

et al. 2014

2014 IEEE International Symposium on Radio-Frequency Integration Technology

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In this paper, the latest research results for design and characterization of an 85 GHz fully monolithic integrated schottky rectenna (rectifying antenna) using SiMMWIC (Silicon Monolithic Mm-Wave Integrated Circuits) technology are presented. Under RF excitation in frequency range of 75 ~ 90 GHz a sharp receiving profile at 85 GHz of the designed rectenna is clearly characterized. With different bias currents (0.1 μA ~ 0.44 mA) the working point of the embedded schottky diode (cut-off frequency ~ 0.5 THz at 0 V) could be dynamically tuned for the optimal conversion voltage. The corresponding tuning range of the conversion voltage could be varied from 1 mV to 17 mV at 85 GHz.

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SIMMWIC rectennas on high-resistivity silicon and CMOS compatibility

Cited by 38 publications

References 13 publications

Systemintegration von Mikrowellen Schottky-Mischern und MEMS-HF-Schaltern

Systemintegration von Mikrowellen Schottky-Mischern und MEMS-HF-Schaltern

Powering autonomous cubic-millimeter devices

A monolithic integrated 85 GHz schottky rectenna with dynamic tuning range of the conversion voltage

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