Silicon waveguided components for the long-wave infrared region

Soref, Richard A.; Emelett, Stephen J.; Buchwald, Walter R.

doi:10.1088/1464-4258/8/10/004

Cited by 335 publications

(201 citation statements)

References 13 publications

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“…It is also important that, if the tensile strain can be increased as large as 2%, the energy of conduction band at the direct Γ point is reduced lower than that at the indirect L point, leading to a transition to a direct-gap semiconductor. An efficient light emission would be obtained, although the gap energy is reduced to ∼0.6 eV, which corresponds to the wavelength more than 2 µm favorable for the optical biosensing [29]. …”

Section: Epitaxial Growth Of Ge On Simentioning

confidence: 99%

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ishikawa

Saito

2014

IEICE Electron. Express

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Section: Epitaxial Growth Of Ge On Simentioning

confidence: 99%

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ishikawa

Saito

2014

IEICE Electron. Express

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“…Two identical HM waveguides composed of alternating metal-dielectric multi layers [25,26] with a square cross section of 250 nm × 250 nm are placed adjacent to the both sides of a nonlinear organic polymer in the slot (height g = 20 nm). The assumed polymer is a doped, cross-linked organic polymer with a nonlinear susceptibility of χ (2) 111 = 619 pm/V [15,27] and refractive index n = 1.68 at the wavelength of λ = 1,550 nm (n = 1.58 at λ 3,100 nm) [24]. The hyperbolic metamaterials were composed by alternate thin layers of silver (Ag, filling ratio f r ) and germanium (Ge) with a pitch thickness of 10 nm [24].…”

Section: Waveguide Structurementioning

confidence: 99%

“…Mid-infrared (IR), defined as wavelengths from 2 µm to 6 µm, has great potentials in chemical and bio-molecular sensing, free space communication, and thermal imaging for both civil and military purposes [1][2][3]. Yet, sources and detectors comparable to those in the near-IR regime have not yet emerged in this wavelength range [4].…”

Section: Introductionmentioning

confidence: 99%

Highly efficient second harmonic generation in hyperbolic metamaterial slot waveguides with large phase matching tolerance

Sun¹,

Zhang²,

Cheng³

et al. 2015

Opt. Express

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Highly efficient second harmonic generation (SHG) bridging the mid-infrared (IR) and near-IR wavelengths in a coupled hyperbolic metamaterial waveguide with a nonlinear-polymer-filled nanoscale slot is theoretically investigated. By engineering the geometrical parameters, the collinear phase matching condition is satisfied between the even hybrid modes at the fundamental frequency (3,100 nm) and the second harmonic (1,550 nm). Two modes manifest the great field overlap and the significant field enhancement in the nonlinear integration area (i.e. the slot), which leads to extreme large nonlinear coupling coefficient. For a low pumping power of 100 mW, the device length is as short as 2.19 µm and the normalized conversion efficiency comes up to more than 6.37 × 10 5 W −1 cm −2 which outperforms that of the plasmonic-based structures. Moreover, the efficient SHG can be achieved with great phase matching tolerance, i.e., a small theoretical fabrication-error sensitivity to filling ratio and a broad pump bandwidth in a compact device length of 2.19 µm using 100 mW pump. The proposed scheme links the mature near-IR devices to the mid-IR regime and have a great potential for integrated chip-scale alloptical signal processes.

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“…Th e potential of seamless integration of multiple components on a single chip off ers an attractive solution for mid-infrared applications. Soref et al [72] preformed a theoretical study of various types of optical waveguides for longer wavelength transmission in 2006. Silicon-on-sapphire grating couplers [73] and waveguides [74] have since been experimentally demonstrated at mid-infrared wavelengths.…”

Section: Future Trendsmentioning

confidence: 99%

Device engineering for silicon photonics

Chen

Tsang

2011

NPG Asia Mater

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A fter an impressive initial spurt of progress in device engineering during the early 2000s when the optical communications industry saw unprecedented levels of investment, silicon photonics continues to develop at an amazing pace. Many novel applications and devices are emerging. Silicon photonics has the potential to become a major platform for optoelectronic integrated circuits (OEICs) and to be used in high-speed optical interconnects for chip-level data communications because of the extremely large bandwidth and high speed off ered by optical communications. Many challenges have been addressed through the introduction of innovative ideas, paving the way for the practical deployment of silicon-based optoelectronic devices and integrated photonic circuits in computing and telecommunication systems [1]. Th e commercialization of silicon photonics, originally driven by applications in telecommunications, is now also driven by the needs of the computing industry for highspeed, energy-effi cient optical cable technology, such as the Light Peak Technology under development by Intel (USA). Th e California-based company Luxtera (USA) has also commercialized a series of siliconphotonic transceiver systems.Silicon off ers many advantages over alternative material systems (e.g. InP, GaAs, LiNbO 3 ) for OEIC applications. One major reason for the wide interest that silicon photonics is attracting is the cost advantage that silicon photonics can potentially off er through its compatibility with the complementary metal-oxide-semiconductor (CMOS) fabrication processes used in the microelectronics industry. Th e huge investments that have been made in CMOS microelectronics fabrication technologies has resulted in processes that off er much higher yield than is possible using alternative materials for photonics, thus making feasible large-scale integration and the production of silicon-photonic devices that are monolithically integrated with not only optical components but also electronic circuits in the same platform at ultrahigh density. Another reason for the attractiveness of silicon photonics is the high refractive index contrast between the silicon core (refractive index, 3.48) and silicon dioxide cladding (refractive index, 1.45) in silicon-on-insulator (SOI) devices, which ensures the submicrometer confi nement of light and allows tight bending in optical waveguides. Th e high-density integration of photonic circuits on SOI platforms is thus feasible. Th e low cost of high-quality SOI wafers is another advantage of silicon photonics. All kinds of low-cost devices enabled by silicon photonics are therefore predicted, and these may also enjoy the other benefi ts of monolithic integration: smaller size, increased power effi ciency and improved reliability. Figure 1 shows an example of a high-density integrated photonics devices fabricated on a 6-inch SOI wafer using CMOS-compatible technology.In this article, we review some of the exciting progress that has been made in silicon photonics with the aim of providing a broa...

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Silicon waveguided components for the long-wave infrared region

Cited by 335 publications

References 13 publications

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Highly efficient second harmonic generation in hyperbolic metamaterial slot waveguides with large phase matching tolerance

Device engineering for silicon photonics

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